Complementary metal-oxide semiconductor-compatible Ni/Ge/Al ohmic contacts to a n+-InGaAs layer exhibited a specific contact resistivity of 9.8 × 10-8 Ωcm2 at 300 and 5.1 × 10-8 Ωcm2 at 500 C. Only 7 nm of the n+-InGaAs layer was consumed during the Ni/Ge/Al ohmic formation. For comparison, Ni/Al and Ge/Ni/Al contacts showed a higher specific contact resistivity with significant consumption of the n+-InGaAs layer. The relatively low contact resistivities for Ni/Ge/Al are attributed to the transient increase in the donor concentration of n+-InGaAs. Ge metals segregated towards the n+-InGaAs surface and redistributed into the Ga and In sites, which increased the doping and acted as a diffusion barrier. These electrical and physical analyses of Ni/Ge/Al ohmic contacts to n+-InGaAs advance Au-free metallization techniques for highly scaled InGaAs channel metal-oxide field-effect transistors.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2015 Apr 1|
Bibliographical notePublisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry