Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

Yoon Ho Jung, Seon Yeong Kim, Hae Chang Jeong, Hong Gyu Park, Dai Hyun Kim, Tae Wan Kim, Dae Shik Seo

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A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V · s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.

Original languageEnglish
Pages (from-to)Q51-Q53
JournalECS Solid State Letters
Issue number9
Publication statusPublished - 2014


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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