Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

Yoon Ho Jung, Seon Yeong Kim, Hae Chang Jeong, Hong Gyu Park, Dai Hyun Kim, Tae Wan Kim, Dae Shik Seo

Research output: Contribution to journalArticle

Abstract

A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V · s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.

Original languageEnglish
Pages (from-to)Q51-Q53
JournalECS Solid State Letters
Volume3
Issue number9
DOIs
Publication statusPublished - 2014

Fingerprint

Zinc Oxide
Yttrium
Indium
Azobenzene
Thin film transistors
Zinc oxide
Oxide films
Threshold voltage
Molecular structure
Electric properties
azobenzene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Jung, Yoon Ho ; Kim, Seon Yeong ; Jeong, Hae Chang ; Park, Hong Gyu ; Kim, Dai Hyun ; Kim, Tae Wan ; Seo, Dae Shik. / Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light. In: ECS Solid State Letters. 2014 ; Vol. 3, No. 9. pp. Q51-Q53.
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abstract = "A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V · s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.",
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Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light. / Jung, Yoon Ho; Kim, Seon Yeong; Jeong, Hae Chang; Park, Hong Gyu; Kim, Dai Hyun; Kim, Tae Wan; Seo, Dae Shik.

In: ECS Solid State Letters, Vol. 3, No. 9, 2014, p. Q51-Q53.

Research output: Contribution to journalArticle

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AU - Kim, Dai Hyun

AU - Kim, Tae Wan

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