Back end of the line

Hyungjun Kim, Soo Hyun Kim, H. B.R. Lee

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Due to great benefits including excellent conformality and thickness controllability at atomic scale, atomic layer deposition (ALD) is being considered as a promising deposition technique, for sub-20 nm technology node logic device fabrication. Among various potential applications in logic device fabrication, the ability of ALD to deposit various metal and nitride films with high quality at low temperature makes it a viable deposition process for back end of the line (BEOL) process. First, transition metal deposition technique with extremely good conformality is required for silicide contact formation with low contact resistance. On top of the silicide contact, tungsten plug formation with very good gap filling property is required. Also, for Cu metallization, very thin and conformal deposition of diffusion barrier and seed layer is essential for good gap fill by electroplating. In this chapter, we will review the efforts on the application of ALD at BEOL process; including contact/plug formation and metallization.

Original languageEnglish
Title of host publicationAtomic Layer Deposition for Semiconductors
PublisherSpringer US
Pages209-238
Number of pages30
Volume9781461480549
ISBN (Electronic)9781461480549
ISBN (Print)1461480531, 9781461480532
DOIs
Publication statusPublished - 2014 Jul 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Kim, H., Kim, S. H., & Lee, H. B. R. (2014). Back end of the line. In Atomic Layer Deposition for Semiconductors (Vol. 9781461480549, pp. 209-238). Springer US. https://doi.org/10.1007/978-1-4614-8054-9_8