Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Zhihong Huang, Jungwoo Oh, Joe C. Campbell

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We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

Original languageEnglish
Pages (from-to)3286-3288
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2004 Oct 11


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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