Abstract
We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.
Original language | English |
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Pages (from-to) | 3286-3288 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2004 Oct 11 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)