We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)