Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Zhihong Huang; Jungwoo Oh; Joe C. Campbell

doi:10.1063/1.1805706

Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Zhihong Huang, Jungwoo Oh, Joe C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si _xGe _1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

Original language	English
Pages (from-to)	3286-3288
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1805706
Publication status	Published - 2004 Oct 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1805706

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abstract = "We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.",

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AU - Campbell, Joe C.

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AB - We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

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