Abstract
We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.
| Original language | English |
|---|---|
| Pages (from-to) | 3286-3288 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2004 Oct 11 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers. / Huang, Zhihong; Oh, Jungwoo; Campbell, Joe C.
In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3286-3288.Research output: Contribution to journal › Article
TY - JOUR
T1 - Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers
AU - Huang, Zhihong
AU - Oh, Jungwoo
AU - Campbell, Joe C.
PY - 2004/10/11
Y1 - 2004/10/11
N2 - We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.
AB - We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.
UR - http://www.scopus.com/inward/record.url?scp=8644270529&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=8644270529&partnerID=8YFLogxK
U2 - 10.1063/1.1805706
DO - 10.1063/1.1805706
M3 - Article
AN - SCOPUS:8644270529
VL - 85
SP - 3286
EP - 3288
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
ER -