Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Zhihong Huang; Jungwoo Oh; Joe C. Campbell

doi:10.1063/1.1805706

Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Zhihong Huang, Jungwoo Oh, Joe C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si _xGe _1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

Original language	English
Pages (from-to)	3286-3288
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1805706
Publication status	Published - 2004 Oct 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1805706

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@article{b114ea6b1f9f42b5b7402fe9696eda54,

title = "Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers",

abstract = "We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.",

author = "Zhihong Huang and Jungwoo Oh and Campbell, {Joe C.}",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1805706",

language = "English",

volume = "85",

pages = "3286--3288",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

AU - Huang, Zhihong

AU - Oh, Jungwoo

AU - Campbell, Joe C.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

AB - We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two Si xGe 1-x buffer layers. Dark current as low as 1.07 μA was achieved at 10 V reverse bias for 24 μm-diam mesa devices. At 1.3 μm wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above 2 V reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V.

UR - http://www.scopus.com/inward/record.url?scp=8644270529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8644270529&partnerID=8YFLogxK

U2 - 10.1063/1.1805706

DO - 10.1063/1.1805706

M3 - Article

AN - SCOPUS:8644270529

VL - 85

SP - 3286

EP - 3288

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -

Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

Abstract

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