Balanced Performance Enhancements of a-InGaZnO Thin Film Transistors by Using All-Amorphous Dielectric Multilayers Sandwiching High-k CaCu3Ti4O12

Ye Seul Jung; Chan Su Han; Bhaskar Chandra Mohanty; Hong je Choi; Jin Hyeok Lee; Hyun Jae Kim; Yong Soo Cho

doi:10.1002/aelm.201900322

Balanced Performance Enhancements of a-InGaZnO Thin Film Transistors by Using All-Amorphous Dielectric Multilayers Sandwiching High-k CaCu₃Ti₄O₁₂

Ye Seul Jung, Chan Su Han, Bhaskar Chandra Mohanty, Hong je Choi, Jin Hyeok Lee, Hyun Jae Kim, Yong Soo Cho

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The requirements of low power consumption and fast operation have necessitated the development of thin film transistors (TFTs) with exploration of new dielectric materials. Here, the unprecedented integration of high-κ dielectric CaCu₃Ti₄O₁₂ is reported, yielding significant enhancements in the performance of amorphous InGaZnO TFTs. Using a multilayer structured amorphous Al₂O₃/CaCu₃Ti₄O₁₂/Al₂O₃ dielectric configuration, the performance of the transistors is greatly improved as highlighted with high saturation mobility ('10 cm² Vs⁻¹), high on/off current ratio (3.8 × 10⁷), low threshold voltage (≈0.51 V), and low subthreshold swing (≈0.45 V decade⁻¹). The balanced performance enhancements are attributed to the lower density of interfacial/bulk trap states and sufficient band offsets.

Original language	English
Article number	1900322
Journal	Advanced Electronic Materials
Volume	5
Issue number	10
DOIs	https://doi.org/10.1002/aelm.201900322
Publication status	Published - 2019 Oct 1

Bibliographical note

Funding Information:
Y.S.J., C.S.H., and B.C.M. contributed equally to this work. This work was financially supported by grants from the National Research Foundation of Korea (NRF-2016M3A7B4910151), the Industrial Strategic Technology Development Program (#10079981), and the Korea Institute of Energy Technology Evaluation and Planning (No. 20173010013340) funded by the Ministry of Trade, Industry & Energy (MOTIE) of Korea.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Access to Document

10.1002/aelm.201900322

Cite this

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title = "Balanced Performance Enhancements of a-InGaZnO Thin Film Transistors by Using All-Amorphous Dielectric Multilayers Sandwiching High-k CaCu3Ti4O12 ",

abstract = "The requirements of low power consumption and fast operation have necessitated the development of thin film transistors (TFTs) with exploration of new dielectric materials. Here, the unprecedented integration of high-κ dielectric CaCu3Ti4O12 is reported, yielding significant enhancements in the performance of amorphous InGaZnO TFTs. Using a multilayer structured amorphous Al2O3/CaCu3Ti4O12/Al2O3 dielectric configuration, the performance of the transistors is greatly improved as highlighted with high saturation mobility ('10 cm2 Vs−1), high on/off current ratio (3.8 × 107), low threshold voltage (≈0.51 V), and low subthreshold swing (≈0.45 V decade−1). The balanced performance enhancements are attributed to the lower density of interfacial/bulk trap states and sufficient band offsets.",

author = "Jung, {Ye Seul} and Han, {Chan Su} and Mohanty, {Bhaskar Chandra} and Choi, {Hong je} and Lee, {Jin Hyeok} and Kim, {Hyun Jae} and Cho, {Yong Soo}",

note = "Funding Information: Y.S.J., C.S.H., and B.C.M. contributed equally to this work. This work was financially supported by grants from the National Research Foundation of Korea (NRF-2016M3A7B4910151), the Industrial Strategic Technology Development Program (#10079981), and the Korea Institute of Energy Technology Evaluation and Planning (No. 20173010013340) funded by the Ministry of Trade, Industry & Energy (MOTIE) of Korea. Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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Balanced Performance Enhancements of a-InGaZnO Thin Film Transistors by Using All-Amorphous Dielectric Multilayers Sandwiching High-k CaCu₃Ti₄O₁₂ . / Jung, Ye Seul; Han, Chan Su; Mohanty, Bhaskar Chandra et al.

In: Advanced Electronic Materials, Vol. 5, No. 10, 1900322, 01.10.2019.

Research output: Contribution to journal › Article › peer-review

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AU - Kim, Hyun Jae

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