The requirements of low power consumption and fast operation have necessitated the development of thin film transistors (TFTs) with exploration of new dielectric materials. Here, the unprecedented integration of high-κ dielectric CaCu3Ti4O12 is reported, yielding significant enhancements in the performance of amorphous InGaZnO TFTs. Using a multilayer structured amorphous Al2O3/CaCu3Ti4O12/Al2O3 dielectric configuration, the performance of the transistors is greatly improved as highlighted with high saturation mobility ('10 cm2 Vs−1), high on/off current ratio (3.8 × 107), low threshold voltage (≈0.51 V), and low subthreshold swing (≈0.45 V decade−1). The balanced performance enhancements are attributed to the lower density of interfacial/bulk trap states and sufficient band offsets.
Bibliographical noteFunding Information:
Y.S.J., C.S.H., and B.C.M. contributed equally to this work. This work was financially supported by grants from the National Research Foundation of Korea (NRF-2016M3A7B4910151), the Industrial Strategic Technology Development Program (#10079981), and the Korea Institute of Energy Technology Evaluation and Planning (No. 20173010013340) funded by the Ministry of Trade, Industry & Energy (MOTIE) of Korea.
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials