Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors

Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

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50 Citations (Scopus)

Abstract

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.

Original languageEnglish
Article number084506
JournalJournal of Applied Physics
Volume115
Issue number8
DOIs
Publication statusPublished - 2014 Feb 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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