Abstract
Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2-based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
| Original language | English |
|---|---|
| Pages (from-to) | 6545-6550 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry Letters |
| DOIs | |
| Publication status | Accepted/In press - 2019 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physical and Theoretical Chemistry
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Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing. / Lee, Jung Hwan; Shin, Dongguen; Rhee, Ryan; Yun, Sangeun; Yeom, Kyung Mun; Chun, Do Hyung; Lee, Sunje; Kim, Dongho; Yi, Yeonjin; Noh, Jun Hong; Park, Jong Hyeok.
In: Journal of Physical Chemistry Letters, 01.01.2019, p. 6545-6550.Research output: Contribution to journal › Article
TY - JOUR
T1 - Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing
AU - Lee, Jung Hwan
AU - Shin, Dongguen
AU - Rhee, Ryan
AU - Yun, Sangeun
AU - Yeom, Kyung Mun
AU - Chun, Do Hyung
AU - Lee, Sunje
AU - Kim, Dongho
AU - Yi, Yeonjin
AU - Noh, Jun Hong
AU - Park, Jong Hyeok
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2-based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
AB - Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2-based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
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U2 - 10.1021/acs.jpclett.9b02488
DO - 10.1021/acs.jpclett.9b02488
M3 - Article
C2 - 31596090
AN - SCOPUS:85073821730
SP - 6545
EP - 6550
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
SN - 1948-7185
ER -