Band alignment transition from type-I to type-II of InP/In0.48Ga0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In0.48Ga0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In0.48Ga0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In0.48Ga0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.
|Title of host publication||Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|Publication status||Published - 2019 Feb 22|
|Event||2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of|
Duration: 2018 Oct 28 → 2018 Oct 31
|Name||IEEE Region 10 Annual International Conference, Proceedings/TENCON|
|Conference||2018 IEEE Region 10 Conference, TENCON 2018|
|Country/Territory||Korea, Republic of|
|Period||18/10/28 → 18/10/31|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning) (No. 2017R1C1B5076588).
© 2018 IEEE.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering