Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)

H. Jin, S. K. Oh, H. J. Kang, M. H. Cho

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.

Original languageEnglish
Article number122901
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
Publication statusPublished - 2006 Sep 29

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silicates
conduction bands
atomic layer epitaxy
x ray spectroscopy
energy bands
energy dissipation
photoelectron spectroscopy
electron energy
valence
requirements
profiles
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)",
abstract = "Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.",
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Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100). / Jin, H.; Oh, S. K.; Kang, H. J.; Cho, M. H.

In: Applied Physics Letters, Vol. 89, No. 12, 122901, 29.09.2006.

Research output: Contribution to journalArticle

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T1 - Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)

AU - Jin, H.

AU - Oh, S. K.

AU - Kang, H. J.

AU - Cho, M. H.

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AB - Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.

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