Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)

H. Jin; S. K. Oh; H. J. Kang; M. H. Cho

doi:10.1063/1.2355453

Band gap and band offsets for ultrathin (HfO₂) _x(SiO₂)_1-x dielectric films on Si (100)

H. Jin, S. K. Oh, H. J. Kang, M. H. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO₂)_0.75(SiO ₂)_0.25 to 6.10 eV for (HfO₂) _0.25(SiO₂)_0.75, which is much smaller than 8. 90 eV for SiO₂. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.

Original language	English
Article number	122901
Journal	Applied Physics Letters
Volume	89
Issue number	12
DOIs	https://doi.org/10.1063/1.2355453
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation grant (KRF-2003-005-C00015).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2355453

Cite this

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title = "Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)",

abstract = "Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.",

author = "H. Jin and Oh, {S. K.} and Kang, {H. J.} and Cho, {M. H.}",

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AU - Jin, H.

AU - Oh, S. K.

AU - Kang, H. J.

AU - Cho, M. H.

N1 - Funding Information: This work was supported by Korea Research Foundation grant (KRF-2003-005-C00015).

PY - 2006

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AB - Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.

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