Abstract
Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.
| Original language | English |
|---|---|
| Article number | 122901 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2006 Sep 29 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100). / Jin, H.; Oh, S. K.; Kang, H. J.; Cho, M. H.
In: Applied Physics Letters, Vol. 89, No. 12, 122901, 29.09.2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)
AU - Jin, H.
AU - Oh, S. K.
AU - Kang, H. J.
AU - Cho, M. H.
PY - 2006/9/29
Y1 - 2006/9/29
N2 - Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.
AB - Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.
UR - http://www.scopus.com/inward/record.url?scp=33748959399&partnerID=8YFLogxK
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U2 - 10.1063/1.2355453
DO - 10.1063/1.2355453
M3 - Article
AN - SCOPUS:33748959399
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 122901
ER -