Band gap and band offsets for ultrathin (HfO2) x(SiO2)1-x dielectric films on Si (100)

H. Jin, S. K. Oh, H. J. Kang, M. H. Cho

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Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52 eV for (HfO2)0.75(SiO 2)0.25 to 6.10 eV for (HfO2) 0.25(SiO2)0.75, which is much smaller than 8. 90 eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1 eV, which satisfies the minimum requirement for the carrier barrier heights.

Original languageEnglish
Article number122901
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation grant (KRF-2003-005-C00015).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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