Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Y. J. Cho; W. J. Lee; C. Y. Kim; M. H. Cho; H. Kim; H. J. Lee; D. W. Moon; H. J. Kang

doi:10.1063/1.3000392

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Y. J. Cho, W. J. Lee, C. Y. Kim, M. H. Cho, H. Kim, H. J. Lee, D. W. Moon, H. J. Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.

Original language	English
Article number	164117
Journal	Journal of Chemical Physics
Volume	129
Issue number	16
DOIs	https://doi.org/10.1063/1.3000392
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was partly supported by the IT R&D program of MKE/IITA and the system IC 2010 program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)",

abstract = "The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.",

author = "Cho, {Y. J.} and Lee, {W. J.} and Kim, {C. Y.} and Cho, {M. H.} and H. Kim and Lee, {H. J.} and Moon, {D. W.} and Kang, {H. J.}",

note = "Funding Information: This work was partly supported by the IT R&D program of MKE/IITA and the system IC 2010 program.",

year = "2008",

doi = "10.1063/1.3000392",

language = "English",

volume = "129",

journal = "Journal of Chemical Physics",

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AU - Cho, Y. J.

AU - Lee, W. J.

AU - Kim, C. Y.

AU - Cho, M. H.

AU - Kim, H.

AU - Lee, H. J.

AU - Moon, D. W.

AU - Kang, H. J.

N1 - Funding Information: This work was partly supported by the IT R&D program of MKE/IITA and the system IC 2010 program.

PY - 2008

Y1 - 2008

N2 - The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.

AB - The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.

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SN - 0021-9606

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ER -

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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