Abstract
The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.
| Original language | English |
|---|---|
| Article number | 164117 |
| Journal | Journal of Chemical Physics |
| Volume | 129 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2008 Nov 10 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001). / Cho, Y. J.; Lee, W. J.; Kim, C. Y.; Cho, M. H.; Kim, H.; Lee, H. J.; Moon, D. W.; Kang, H. J.
In: Journal of Chemical Physics, Vol. 129, No. 16, 164117, 10.11.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)
AU - Cho, Y. J.
AU - Lee, W. J.
AU - Kim, C. Y.
AU - Cho, M. H.
AU - Kim, H.
AU - Lee, H. J.
AU - Moon, D. W.
AU - Kang, H. J.
PY - 2008/11/10
Y1 - 2008/11/10
N2 - The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.
AB - The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.
UR - http://www.scopus.com/inward/record.url?scp=55349144871&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55349144871&partnerID=8YFLogxK
U2 - 10.1063/1.3000392
DO - 10.1063/1.3000392
M3 - Article
C2 - 19045257
AN - SCOPUS:55349144871
VL - 129
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
SN - 0021-9606
IS - 16
M1 - 164117
ER -