Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Y. J. Cho, W. J. Lee, C. Y. Kim, M. H. Cho, H. Kim, H. J. Lee, D. W. Moon, H. J. Kang

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Abstract

The interfacial reaction of hafnium-silicate [(HfO2) x (SiO2) 1-x, x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction.

Original languageEnglish
Article number164117
JournalJournal of Chemical Physics
Volume129
Issue number16
DOIs
Publication statusPublished - 2008 Nov 10

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Cho, Y. J., Lee, W. J., Kim, C. Y., Cho, M. H., Kim, H., Lee, H. J., Moon, D. W., & Kang, H. J. (2008). Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001). Journal of Chemical Physics, 129(16), [164117]. https://doi.org/10.1063/1.3000392