Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2

Jun Kyu Yang, Hyung-Ho Park, Kwang Ho Kwon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The band gap and band offset of Gd2O3 gate oxide film on n-GaAs (001) could be controlled by the incorporation of SiO2. Prior to the deposition of the gate oxide, the GaAs surface was passivated with sulfur. From the observation of 3p photoelectron lines of Ga and As, S-passivated GaAs surface was found to be not-oxidized during the formation of the gate oxide films. The photoelectron binding energy shift of Gd 4d was observed when SiO2 was incorporated into Gd2O3 and this could be explained by the different electronegativity of second nearest neighbor element, in this work, Si. Energy band gaps of Gd2O 3 and (Gd2O3)0.5(SiO 2)0.5 were measured as ∼5.4 and ∼6.8 eV, respectively, using energy loss spectra of O 1s photoelectron lines. The change in the energy band structure of Gd2O3 with regard to n-GaAs due to the incorporation of SiO2 was demonstrated by correlating band gap values and valence-band maximum energy. An enhanced conduction-band offset of (Gd2O3)0.5(SiO 2)0.5 resulted in the decrease of leakage current density. Fowler-Nordheim tunneling mechanism was applied to explain the increase of barrier height.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalThin Solid Films
Volume484
Issue number1-2
DOIs
Publication statusPublished - 2005 Jul 22

Fingerprint

Photoelectrons
Band structure
Energy gap
photoelectrons
Oxide films
energy bands
oxide films
Electronegativity
Valence bands
Conduction bands
Binding energy
Leakage currents
Field emission
Energy dissipation
Current density
Sulfur
Oxides
conduction bands
leakage
sulfur

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Yang, Jun Kyu ; Park, Hyung-Ho ; Kwon, Kwang Ho. / Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2 In: Thin Solid Films. 2005 ; Vol. 484, No. 1-2. pp. 415-419.
@article{6be2df7bff384a83ba10784fff3fe883,
title = "Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2",
abstract = "The band gap and band offset of Gd2O3 gate oxide film on n-GaAs (001) could be controlled by the incorporation of SiO2. Prior to the deposition of the gate oxide, the GaAs surface was passivated with sulfur. From the observation of 3p photoelectron lines of Ga and As, S-passivated GaAs surface was found to be not-oxidized during the formation of the gate oxide films. The photoelectron binding energy shift of Gd 4d was observed when SiO2 was incorporated into Gd2O3 and this could be explained by the different electronegativity of second nearest neighbor element, in this work, Si. Energy band gaps of Gd2O 3 and (Gd2O3)0.5(SiO 2)0.5 were measured as ∼5.4 and ∼6.8 eV, respectively, using energy loss spectra of O 1s photoelectron lines. The change in the energy band structure of Gd2O3 with regard to n-GaAs due to the incorporation of SiO2 was demonstrated by correlating band gap values and valence-band maximum energy. An enhanced conduction-band offset of (Gd2O3)0.5(SiO 2)0.5 resulted in the decrease of leakage current density. Fowler-Nordheim tunneling mechanism was applied to explain the increase of barrier height.",
author = "Yang, {Jun Kyu} and Hyung-Ho Park and Kwon, {Kwang Ho}",
year = "2005",
month = "7",
day = "22",
doi = "10.1016/j.tsf.2005.02.005",
language = "English",
volume = "484",
pages = "415--419",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2 . / Yang, Jun Kyu; Park, Hyung-Ho; Kwon, Kwang Ho.

In: Thin Solid Films, Vol. 484, No. 1-2, 22.07.2005, p. 415-419.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2

AU - Yang, Jun Kyu

AU - Park, Hyung-Ho

AU - Kwon, Kwang Ho

PY - 2005/7/22

Y1 - 2005/7/22

N2 - The band gap and band offset of Gd2O3 gate oxide film on n-GaAs (001) could be controlled by the incorporation of SiO2. Prior to the deposition of the gate oxide, the GaAs surface was passivated with sulfur. From the observation of 3p photoelectron lines of Ga and As, S-passivated GaAs surface was found to be not-oxidized during the formation of the gate oxide films. The photoelectron binding energy shift of Gd 4d was observed when SiO2 was incorporated into Gd2O3 and this could be explained by the different electronegativity of second nearest neighbor element, in this work, Si. Energy band gaps of Gd2O 3 and (Gd2O3)0.5(SiO 2)0.5 were measured as ∼5.4 and ∼6.8 eV, respectively, using energy loss spectra of O 1s photoelectron lines. The change in the energy band structure of Gd2O3 with regard to n-GaAs due to the incorporation of SiO2 was demonstrated by correlating band gap values and valence-band maximum energy. An enhanced conduction-band offset of (Gd2O3)0.5(SiO 2)0.5 resulted in the decrease of leakage current density. Fowler-Nordheim tunneling mechanism was applied to explain the increase of barrier height.

AB - The band gap and band offset of Gd2O3 gate oxide film on n-GaAs (001) could be controlled by the incorporation of SiO2. Prior to the deposition of the gate oxide, the GaAs surface was passivated with sulfur. From the observation of 3p photoelectron lines of Ga and As, S-passivated GaAs surface was found to be not-oxidized during the formation of the gate oxide films. The photoelectron binding energy shift of Gd 4d was observed when SiO2 was incorporated into Gd2O3 and this could be explained by the different electronegativity of second nearest neighbor element, in this work, Si. Energy band gaps of Gd2O 3 and (Gd2O3)0.5(SiO 2)0.5 were measured as ∼5.4 and ∼6.8 eV, respectively, using energy loss spectra of O 1s photoelectron lines. The change in the energy band structure of Gd2O3 with regard to n-GaAs due to the incorporation of SiO2 was demonstrated by correlating band gap values and valence-band maximum energy. An enhanced conduction-band offset of (Gd2O3)0.5(SiO 2)0.5 resulted in the decrease of leakage current density. Fowler-Nordheim tunneling mechanism was applied to explain the increase of barrier height.

UR - http://www.scopus.com/inward/record.url?scp=19944406478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944406478&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.02.005

DO - 10.1016/j.tsf.2005.02.005

M3 - Article

AN - SCOPUS:19944406478

VL - 484

SP - 415

EP - 419

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -