Band offset control of Gd₂O₃/n-GaAs (001) structure by incorporation of SiO₂

Engineering

• Gate Oxide 30%
• Oxide Film 20%
• Band Gap 20%
• Sulfur 10%
• Energy Dissipation 10%
• Nearest Neighbor 10%
• Band Gap Energy 10%
• Fowler-Nordheim Tunnelling 10%
• Barrier Height 10%
• Energy Shift 10%
• Electronegativity 10%
• Conduction Band 10%
• Loss Spectrum 10%
• Gap Value 10%
• Valence Band 10%
• Binding Energy 10%

Chemistry

• Photoelectron 30%
• Band Offset 30%
• Band Gap 20%
• Binding Energy 10%
• Current Density 10%
• Leakage Current 10%
• Valence Band 10%
• Electronegativity 10%
• Fowler-Nordheim Tunneling 10%

Material Science

• Gallium Arsenide 100%
• Oxide Films 20%
• Electronic Band Structure 10%