Band structure analysis of La0.7Sr0.3MnO3 perovskite manganite using a synchrotron

Hong Sub Lee, Hyung Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

Original languageEnglish
Article number746475
JournalAdvances in Condensed Matter Physics
Volume2015
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

synchrotrons
oxides
valence
energy sources
electron affinity
conduction bands
synchrotron radiation
electrons
cut-off
magnetic properties
optical properties
thin films
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{a99921b83e7442718e3be188ac14e329,
title = "Band structure analysis of La0.7Sr0.3MnO3 perovskite manganite using a synchrotron",
abstract = "Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.",
author = "Lee, {Hong Sub} and Park, {Hyung Ho}",
year = "2015",
month = "1",
day = "1",
doi = "10.1155/2015/746475",
language = "English",
volume = "2015",
journal = "Advances in Condensed Matter Physics",
issn = "1687-8108",
publisher = "Hindawi Publishing Corporation",

}

Band structure analysis of La0.7Sr0.3MnO3 perovskite manganite using a synchrotron. / Lee, Hong Sub; Park, Hyung Ho.

In: Advances in Condensed Matter Physics, Vol. 2015, 746475, 01.01.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Band structure analysis of La0.7Sr0.3MnO3 perovskite manganite using a synchrotron

AU - Lee, Hong Sub

AU - Park, Hyung Ho

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

AB - Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

UR - http://www.scopus.com/inward/record.url?scp=84930670758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930670758&partnerID=8YFLogxK

U2 - 10.1155/2015/746475

DO - 10.1155/2015/746475

M3 - Article

AN - SCOPUS:84930670758

VL - 2015

JO - Advances in Condensed Matter Physics

JF - Advances in Condensed Matter Physics

SN - 1687-8108

M1 - 746475

ER -