Copper thiocyanate (CuSCN) is known as a promising hole transport layer in organic photovoltaics (OPVs) due to its good hole conduction and exciton blocking abilities with high transparency. Despite its successful device applications, the origin of its hole extraction enhancement in OPVs has not yet been understood. Here, we investigated the electronic structure of CuSCN and the energy level alignment at the poly(3-hexylthiophene-2,5-diyl) (P3HT)/CuSCN/ITO interfaces using ultraviolet photoelectron spectroscopy. The band-tail states of CuSCN close to the Fermi level (EF) were observed at 0.25 eV below the EF, leading to good hole transport. The CuSCN interlayer significantly reduces the hole transport barrier between ITO and P3HT due to its high work function and band-tail states. The barrier reduction leads to enhanced current density-voltage characteristics of hole-dominated devices. These results provide the origin of hole-extraction enhancement by CuSCN and insights for further application.
Bibliographical noteFunding Information:
This study was supported by National Research Foundation of K o r e a ( N R F - 2 0 1 5 R 1 C 1 A 1 A 0 1 0 5 5 0 2 6 a n d 2012M3A7B4049801), Samsung Display and Defense Acquisition Program Administration (DAPA), the Agency for Defense Development (ADD), and Yonsei University Future-Leading Research Initiative of 2014 (2015-22-0132).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physical and Theoretical Chemistry