Basic ammonothermal growth of GaN crystals was studied. We examined the effect of different sodium-based mineralizers, including sodium amide, sodium azide, and sodium metal, on the growth rate and quality of the as-grown GaN crystals. Ammonothermally grown GaN crystal in sodium metal mineralizer showed significant increase in both the growth rate and quality of the as-grown GaN crystals. The full-width half-maximum values of the as-grown GaN crystal using sodium metal mineralizer were 270 arcsec for Ga face and 88 arcsec for N face. Also, we reported approximately 2 in. GaN crystals using sodium metal mineralizer. Ammonothermally grown GaN crystal showed higher chemical stability than HVPE-grown GaN crystal after H3PO4 etching at 160 °C for 2 h. The dark spot density in cathodoluminescence image was measured at the level of 1 × 105/cm2.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2017 Nov 15|
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program (Development of high quality GaN single crystal and wafer for white LED [KI002130]) funded by the Ministry of Trade, Industry and Energy, Korea.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry