Batch-processed carbon nanotube wall as pressure and flow sensor

Jungwook Choi, Jongbaeg Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 × 10- 3 from 105Pa, and a nitrogen flow velocity range between 1 and 52.4 mms- 1, are sensed. Further experimental characterizations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.

Original languageEnglish
Article number105502
JournalNanotechnology
Volume21
Issue number10
DOIs
Publication statusPublished - 2010 Feb 26

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Carbon Nanotubes
Carbon nanotubes
Microelectrodes
Sensors
Silicon
Flow velocity
Vacuum gages
Negative temperature coefficient
Pressure gages
Thermistors
Bias voltage
Oxides
Chemical vapor deposition
Nitrogen
Gases
Flow rate
Throughput
Vacuum
Heat transfer
Fabrication

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

@article{0f7fb7f9875245baa6873111d473834b,
title = "Batch-processed carbon nanotube wall as pressure and flow sensor",
abstract = "A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 × 10- 3 from 105Pa, and a nitrogen flow velocity range between 1 and 52.4 mms- 1, are sensed. Further experimental characterizations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.",
author = "Jungwook Choi and Jongbaeg Kim",
year = "2010",
month = "2",
day = "26",
doi = "10.1088/0957-4484/21/10/105502",
language = "English",
volume = "21",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "10",

}

Batch-processed carbon nanotube wall as pressure and flow sensor. / Choi, Jungwook; Kim, Jongbaeg.

In: Nanotechnology, Vol. 21, No. 10, 105502, 26.02.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Batch-processed carbon nanotube wall as pressure and flow sensor

AU - Choi, Jungwook

AU - Kim, Jongbaeg

PY - 2010/2/26

Y1 - 2010/2/26

N2 - A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 × 10- 3 from 105Pa, and a nitrogen flow velocity range between 1 and 52.4 mms- 1, are sensed. Further experimental characterizations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.

AB - A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 × 10- 3 from 105Pa, and a nitrogen flow velocity range between 1 and 52.4 mms- 1, are sensed. Further experimental characterizations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.

UR - http://www.scopus.com/inward/record.url?scp=77149137369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77149137369&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/10/105502

DO - 10.1088/0957-4484/21/10/105502

M3 - Article

C2 - 20154370

AN - SCOPUS:77149137369

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 10

M1 - 105502

ER -