Beam alignment for scanning beam interference lithography

Carl G. Chen, Ralf K. Heilmann, Chulmin Joo, Paul T. Konkola, G. S. Pati, Mark L. Schattenburg

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A system for carrying out automated beam alignment for scanning beam interference lithography (SBIL) was described. A mathematical formalism was developed to describe the iterative beam alignment principle, which can be used to guide the design of such systems. Repeatability experiments show that the system can align the mean beam angle and position to tolerances of ≪10 μrad and ∼10 μm. This fulfills the alignment requirements for nanometer-level SBIL writing.

Original languageEnglish
Pages (from-to)3071-3074
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Lithography
lithography
alignment
Scanning
interference
scanning
formalism
Experiments
requirements

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, Carl G. ; Heilmann, Ralf K. ; Joo, Chulmin ; Konkola, Paul T. ; Pati, G. S. ; Schattenburg, Mark L. / Beam alignment for scanning beam interference lithography. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; Vol. 20, No. 6. pp. 3071-3074.
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Beam alignment for scanning beam interference lithography. / Chen, Carl G.; Heilmann, Ralf K.; Joo, Chulmin; Konkola, Paul T.; Pati, G. S.; Schattenburg, Mark L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 01.11.2002, p. 3071-3074.

Research output: Contribution to journalArticle

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