Abstract
A system for carrying out automated beam alignment for scanning beam interference lithography (SBIL) was described. A mathematical formalism was developed to describe the iterative beam alignment principle, which can be used to guide the design of such systems. Repeatability experiments show that the system can align the mean beam angle and position to tolerances of ≪10 μrad and ∼10 μm. This fulfills the alignment requirements for nanometer-level SBIL writing.
Original language | English |
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Pages (from-to) | 3071-3074 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2002 Nov |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering