Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions

Dongwan Seo, Jihoon Na, Seunghyo Lee, Sangwoo Lim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III-V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, with a focus on the effect of H2O2. Dilution with H2O and addition of H2O2 in HF/H2O2/H2O, NH4OH/H2O2/H2O, and HCl/H2O2/H2O mixtures produced different effects on the GaSb surface. The etching rate of GaSb increased with a high dilution ratio and a small amount of H2O2 in the mixture of NH4OH/H2O2/H2O. The addition of H2O2 in H2O decreased GaSb oxide thickness and increased the contact angle on the GaSb surface and the XPS Ga 3d and Sb 3d3/2 peak area ratios of Ga2O3/GaSb and Sb2O3/GaSb, which strongly imply that the H2O2 in the wet-etching solution served as an inhibitor of surface oxidation on GaSb. On the basis of the observed etching rates of GaSb, oxidation kinetics, contact angles, and chemical states, it is suggested that concurrent oxidation of GaSb and etching of oxidized GaSb occur on the GaSb surface in the presence of H2O2. Furthermore, the overall kinetics is determined by the relative amount of H2O2, which depends on the pH of the etching solution.

Original languageEnglish
Pages (from-to)24774-24780
Number of pages7
JournalJournal of Physical Chemistry C
Volume119
Issue number44
DOIs
Publication statusPublished - 2015 Nov 5

Fingerprint

Wet etching
etching
Etching
Oxidation
Dilution
Contact angle
oxidation
dilution
Gallium
Kinetics
Electron mobility
Corrosion inhibitors
Oxides
kinetics
electron mobility
X ray photoelectron spectroscopy
inhibitors
gallium
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Seo, Dongwan ; Na, Jihoon ; Lee, Seunghyo ; Lim, Sangwoo. / Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions. In: Journal of Physical Chemistry C. 2015 ; Vol. 119, No. 44. pp. 24774-24780.
@article{c51d36490f9347b5b480fac4a98c8b71,
title = "Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions",
abstract = "Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III-V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, with a focus on the effect of H2O2. Dilution with H2O and addition of H2O2 in HF/H2O2/H2O, NH4OH/H2O2/H2O, and HCl/H2O2/H2O mixtures produced different effects on the GaSb surface. The etching rate of GaSb increased with a high dilution ratio and a small amount of H2O2 in the mixture of NH4OH/H2O2/H2O. The addition of H2O2 in H2O decreased GaSb oxide thickness and increased the contact angle on the GaSb surface and the XPS Ga 3d and Sb 3d3/2 peak area ratios of Ga2O3/GaSb and Sb2O3/GaSb, which strongly imply that the H2O2 in the wet-etching solution served as an inhibitor of surface oxidation on GaSb. On the basis of the observed etching rates of GaSb, oxidation kinetics, contact angles, and chemical states, it is suggested that concurrent oxidation of GaSb and etching of oxidized GaSb occur on the GaSb surface in the presence of H2O2. Furthermore, the overall kinetics is determined by the relative amount of H2O2, which depends on the pH of the etching solution.",
author = "Dongwan Seo and Jihoon Na and Seunghyo Lee and Sangwoo Lim",
year = "2015",
month = "11",
day = "5",
doi = "10.1021/acs.jpcc.5b04250",
language = "English",
volume = "119",
pages = "24774--24780",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "44",

}

Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions. / Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo.

In: Journal of Physical Chemistry C, Vol. 119, No. 44, 05.11.2015, p. 24774-24780.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions

AU - Seo, Dongwan

AU - Na, Jihoon

AU - Lee, Seunghyo

AU - Lim, Sangwoo

PY - 2015/11/5

Y1 - 2015/11/5

N2 - Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III-V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, with a focus on the effect of H2O2. Dilution with H2O and addition of H2O2 in HF/H2O2/H2O, NH4OH/H2O2/H2O, and HCl/H2O2/H2O mixtures produced different effects on the GaSb surface. The etching rate of GaSb increased with a high dilution ratio and a small amount of H2O2 in the mixture of NH4OH/H2O2/H2O. The addition of H2O2 in H2O decreased GaSb oxide thickness and increased the contact angle on the GaSb surface and the XPS Ga 3d and Sb 3d3/2 peak area ratios of Ga2O3/GaSb and Sb2O3/GaSb, which strongly imply that the H2O2 in the wet-etching solution served as an inhibitor of surface oxidation on GaSb. On the basis of the observed etching rates of GaSb, oxidation kinetics, contact angles, and chemical states, it is suggested that concurrent oxidation of GaSb and etching of oxidized GaSb occur on the GaSb surface in the presence of H2O2. Furthermore, the overall kinetics is determined by the relative amount of H2O2, which depends on the pH of the etching solution.

AB - Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III-V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, with a focus on the effect of H2O2. Dilution with H2O and addition of H2O2 in HF/H2O2/H2O, NH4OH/H2O2/H2O, and HCl/H2O2/H2O mixtures produced different effects on the GaSb surface. The etching rate of GaSb increased with a high dilution ratio and a small amount of H2O2 in the mixture of NH4OH/H2O2/H2O. The addition of H2O2 in H2O decreased GaSb oxide thickness and increased the contact angle on the GaSb surface and the XPS Ga 3d and Sb 3d3/2 peak area ratios of Ga2O3/GaSb and Sb2O3/GaSb, which strongly imply that the H2O2 in the wet-etching solution served as an inhibitor of surface oxidation on GaSb. On the basis of the observed etching rates of GaSb, oxidation kinetics, contact angles, and chemical states, it is suggested that concurrent oxidation of GaSb and etching of oxidized GaSb occur on the GaSb surface in the presence of H2O2. Furthermore, the overall kinetics is determined by the relative amount of H2O2, which depends on the pH of the etching solution.

UR - http://www.scopus.com/inward/record.url?scp=84946606229&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946606229&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.5b04250

DO - 10.1021/acs.jpcc.5b04250

M3 - Article

AN - SCOPUS:84946606229

VL - 119

SP - 24774

EP - 24780

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 44

ER -