Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se 2 Solar Cell with CBD-ZnS Buffer Layer

Woo Jung Lee, Hye Jung Yu, Jae Hyung Wi, Dae Hyung Cho, Won Seok Han, Jisu Yoo, Yeonjin Yi, Jung Hoon Song, Yong Duck Chung

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We fabricated Cu(In,Ga)Se 2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

Original languageEnglish
Pages (from-to)22151-22158
Number of pages8
JournalACS Applied Materials and Interfaces
Volume8
Issue number34
DOIs
Publication statusPublished - 2016 Aug 31

Fingerprint

Buffer layers
Heterojunctions
Solar cells
Defects
Ammonia
Ultraviolet radiation
Photocurrents
Band structure
Photons
Atoms
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Woo Jung ; Yu, Hye Jung ; Wi, Jae Hyung ; Cho, Dae Hyung ; Han, Won Seok ; Yoo, Jisu ; Yi, Yeonjin ; Song, Jung Hoon ; Chung, Yong Duck. / Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se 2 Solar Cell with CBD-ZnS Buffer Layer In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 34. pp. 22151-22158.
@article{1e5cc71dbe9c456d88fee98f897aec74,
title = "Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se 2 Solar Cell with CBD-ZnS Buffer Layer",
abstract = "We fabricated Cu(In,Ga)Se 2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.",
author = "Lee, {Woo Jung} and Yu, {Hye Jung} and Wi, {Jae Hyung} and Cho, {Dae Hyung} and Han, {Won Seok} and Jisu Yoo and Yeonjin Yi and Song, {Jung Hoon} and Chung, {Yong Duck}",
year = "2016",
month = "8",
day = "31",
doi = "10.1021/acsami.6b05005",
language = "English",
volume = "8",
pages = "22151--22158",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "34",

}

Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se 2 Solar Cell with CBD-ZnS Buffer Layer . / Lee, Woo Jung; Yu, Hye Jung; Wi, Jae Hyung; Cho, Dae Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung Hoon; Chung, Yong Duck.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 34, 31.08.2016, p. 22151-22158.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se 2 Solar Cell with CBD-ZnS Buffer Layer

AU - Lee, Woo Jung

AU - Yu, Hye Jung

AU - Wi, Jae Hyung

AU - Cho, Dae Hyung

AU - Han, Won Seok

AU - Yoo, Jisu

AU - Yi, Yeonjin

AU - Song, Jung Hoon

AU - Chung, Yong Duck

PY - 2016/8/31

Y1 - 2016/8/31

N2 - We fabricated Cu(In,Ga)Se 2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

AB - We fabricated Cu(In,Ga)Se 2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

UR - http://www.scopus.com/inward/record.url?scp=84984921013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84984921013&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b05005

DO - 10.1021/acsami.6b05005

M3 - Article

AN - SCOPUS:84984921013

VL - 8

SP - 22151

EP - 22158

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 34

ER -