Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si 0.7 Ge 0.3 film

B. G. Min, J. H. Yoo, Hyunchul Sohn, Dae Hong Ko, Mann-Ho Cho, K. B. Chung, T. W. Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The change of strain in Si 0.7 Ge 0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si 0.7 Ge 0.3 substrate.

Original languageEnglish
Pages (from-to)2065-2069
Number of pages5
JournalThin Solid Films
Volume518
Issue number8
DOIs
Publication statusPublished - 2010 Feb 1

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piles
Piles
Oxidation
oxidation
Scattering
Ions
ion scattering
Substrates
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{7de575791cca406f821f6f5d1fd1bb6e,
title = "Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si 0.7 Ge 0.3 film",
abstract = "The change of strain in Si 0.7 Ge 0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si 0.7 Ge 0.3 substrate.",
author = "Min, {B. G.} and Yoo, {J. H.} and Hyunchul Sohn and Ko, {Dae Hong} and Mann-Ho Cho and Chung, {K. B.} and Lee, {T. W.}",
year = "2010",
month = "2",
day = "1",
doi = "10.1016/j.tsf.2009.07.145",
language = "English",
volume = "518",
pages = "2065--2069",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "8",

}

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si 0.7 Ge 0.3 film . / Min, B. G.; Yoo, J. H.; Sohn, Hyunchul; Ko, Dae Hong; Cho, Mann-Ho; Chung, K. B.; Lee, T. W.

In: Thin Solid Films, Vol. 518, No. 8, 01.02.2010, p. 2065-2069.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si 0.7 Ge 0.3 film

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, Hyunchul

AU - Ko, Dae Hong

AU - Cho, Mann-Ho

AU - Chung, K. B.

AU - Lee, T. W.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The change of strain in Si 0.7 Ge 0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si 0.7 Ge 0.3 substrate.

AB - The change of strain in Si 0.7 Ge 0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si 0.7 Ge 0.3 substrate.

UR - http://www.scopus.com/inward/record.url?scp=74249113646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74249113646&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.07.145

DO - 10.1016/j.tsf.2009.07.145

M3 - Article

AN - SCOPUS:74249113646

VL - 518

SP - 2065

EP - 2069

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 8

ER -