Behavior of transconductance and drive current of decoupled plasma nitridation oxynitrides

Sangwoo Lim, Tien Ying Luo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A thinner base oxide prior to decoupled plasma nitridation produced an improved high field transconductance normalized by oxide electrical thickness as compared to a thicker base oxide. Normalized peak transconductance at a lower electrical field is improved with a lower nitrogen concentration, but normalized transconductance at a higher electrical field is improved as the nitrogen concentration increases. Although there is a trend that drive current and gate leakage current are mainly determined by base oxide thickness, drive current shows a complicated dependency on a nitrogen concentration. The findings from transistor drive current characteristics are consistent with the behavior of transconductance.

Original languageEnglish
Pages (from-to)3923-3925
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number6 A
DOIs
Publication statusPublished - 2005 Jun 1

Fingerprint

Nitridation
oxynitrides
Transconductance
transconductance
Plasmas
Oxides
oxides
Nitrogen
nitrogen
Leakage currents
Transistors
leakage
transistors
trends

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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AB - A thinner base oxide prior to decoupled plasma nitridation produced an improved high field transconductance normalized by oxide electrical thickness as compared to a thicker base oxide. Normalized peak transconductance at a lower electrical field is improved with a lower nitrogen concentration, but normalized transconductance at a higher electrical field is improved as the nitrogen concentration increases. Although there is a trend that drive current and gate leakage current are mainly determined by base oxide thickness, drive current shows a complicated dependency on a nitrogen concentration. The findings from transistor drive current characteristics are consistent with the behavior of transconductance.

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