Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong-Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

Original languageEnglish
Article number124507
JournalJournal of Applied Physics
Volume100
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

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high electron mobility transistors
plastics
inks
transconductance
printing
transistors
wafers
microstructure
fabrication
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, K. J., Meitl, M. A., Ahn, J-H., Rogers, J. A., Nuzzo, R. G., Kumar, V., & Adesida, I. (2006). Bendable GaN high electron mobility transistors on plastic substrates. Journal of Applied Physics, 100(12), [124507]. https://doi.org/10.1063/1.2349837
Lee, Keon Jae ; Meitl, Matthew A. ; Ahn, Jong-Hyun ; Rogers, John A. ; Nuzzo, Ralph G. ; Kumar, Vipan ; Adesida, Ilesanmi. / Bendable GaN high electron mobility transistors on plastic substrates. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 12.
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Lee, KJ, Meitl, MA, Ahn, J-H, Rogers, JA, Nuzzo, RG, Kumar, V & Adesida, I 2006, 'Bendable GaN high electron mobility transistors on plastic substrates', Journal of Applied Physics, vol. 100, no. 12, 124507. https://doi.org/10.1063/1.2349837

Bendable GaN high electron mobility transistors on plastic substrates. / Lee, Keon Jae; Meitl, Matthew A.; Ahn, Jong-Hyun; Rogers, John A.; Nuzzo, Ralph G.; Kumar, Vipan; Adesida, Ilesanmi.

In: Journal of Applied Physics, Vol. 100, No. 12, 124507, 01.12.2006.

Research output: Contribution to journalArticle

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