Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida

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Abstract

A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

Original languageEnglish
Article number124507
JournalJournal of Applied Physics
Volume100
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Lee, K. J., Meitl, M. A., Ahn, J. H., Rogers, J. A., Nuzzo, R. G., Kumar, V., & Adesida, I. (2006). Bendable GaN high electron mobility transistors on plastic substrates. Journal of Applied Physics, 100(12), [124507]. https://doi.org/10.1063/1.2349837