(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

N. K. Kim, S. J. Yeom, S. Y. Kweon, E. S. Choi, H. J. Sun, J. S. Roh, H. C. Sohn, D. W. Lee, H. S. Kim, B. H. Choi, J. W. Kim, K. J. Choi, N. J. Seong, S. G. Yoon

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Abstract

Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

Original languageEnglish
Pages (from-to)4118-4120
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number18
DOIs
Publication statusPublished - 2004 Nov 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kim, N. K., Yeom, S. J., Kweon, S. Y., Choi, E. S., Sun, H. J., Roh, J. S., Sohn, H. C., Lee, D. W., Kim, H. S., Choi, B. H., Kim, J. W., Choi, K. J., Seong, N. J., & Yoon, S. G. (2004). (Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Applied Physics Letters, 85(18), 4118-4120. https://doi.org/10.1063/1.1812840