(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

N. K. Kim, S. J. Yeom, S. Y. Kweon, E. S. Choi, H. J. Sun, J. S. Roh, H. C. Sohn, D. W. Lee, H. S. Kim, B. H. Choi, J. W. Kim, K. J. Choi, N. J. Seong, S. G. Yoon

Research output: Contribution to journalArticle

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Abstract

Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

Original languageEnglish
Pages (from-to)4118-4120
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number18
DOIs
Publication statusPublished - 2004 Nov 1

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nuclei
margins
thin films
random access memory
extrapolation
capacitors
platinum
cycles
electrodes
electric potential
polarization
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, N. K., Yeom, S. J., Kweon, S. Y., Choi, E. S., Sun, H. J., Roh, J. S., ... Yoon, S. G. (2004). (Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Applied Physics Letters, 85(18), 4118-4120. https://doi.org/10.1063/1.1812840
Kim, N. K. ; Yeom, S. J. ; Kweon, S. Y. ; Choi, E. S. ; Sun, H. J. ; Roh, J. S. ; Sohn, H. C. ; Lee, D. W. ; Kim, H. S. ; Choi, B. H. ; Kim, J. W. ; Choi, K. J. ; Seong, N. J. ; Yoon, S. G. / (Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. In: Applied Physics Letters. 2004 ; Vol. 85, No. 18. pp. 4118-4120.
@article{be77086faa3044b79594d715de200b75,
title = "(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices",
abstract = "Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.",
author = "Kim, {N. K.} and Yeom, {S. J.} and Kweon, {S. Y.} and Choi, {E. S.} and Sun, {H. J.} and Roh, {J. S.} and Sohn, {H. C.} and Lee, {D. W.} and Kim, {H. S.} and Choi, {B. H.} and Kim, {J. W.} and Choi, {K. J.} and Seong, {N. J.} and Yoon, {S. G.}",
year = "2004",
month = "11",
day = "1",
doi = "10.1063/1.1812840",
language = "English",
volume = "85",
pages = "4118--4120",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

Kim, NK, Yeom, SJ, Kweon, SY, Choi, ES, Sun, HJ, Roh, JS, Sohn, HC, Lee, DW, Kim, HS, Choi, BH, Kim, JW, Choi, KJ, Seong, NJ & Yoon, SG 2004, '(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices', Applied Physics Letters, vol. 85, no. 18, pp. 4118-4120. https://doi.org/10.1063/1.1812840

(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. / Kim, N. K.; Yeom, S. J.; Kweon, S. Y.; Choi, E. S.; Sun, H. J.; Roh, J. S.; Sohn, H. C.; Lee, D. W.; Kim, H. S.; Choi, B. H.; Kim, J. W.; Choi, K. J.; Seong, N. J.; Yoon, S. G.

In: Applied Physics Letters, Vol. 85, No. 18, 01.11.2004, p. 4118-4120.

Research output: Contribution to journalArticle

TY - JOUR

T1 - (Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

AU - Kim, N. K.

AU - Yeom, S. J.

AU - Kweon, S. Y.

AU - Choi, E. S.

AU - Sun, H. J.

AU - Roh, J. S.

AU - Sohn, H. C.

AU - Lee, D. W.

AU - Kim, H. S.

AU - Choi, B. H.

AU - Kim, J. W.

AU - Choi, K. J.

AU - Seong, N. J.

AU - Yoon, S. G.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

AB - Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

UR - http://www.scopus.com/inward/record.url?scp=10044250156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044250156&partnerID=8YFLogxK

U2 - 10.1063/1.1812840

DO - 10.1063/1.1812840

M3 - Article

AN - SCOPUS:10044250156

VL - 85

SP - 4118

EP - 4120

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -