Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.
Bibliographical noteFunding Information:
This work was partially supported by the Brain Korea 21 project in 2003 and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)