Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)