Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition

Whang Je Woo, Il Kwon Oh, Bo Eun Park, Youngjun Kim, Jongseo Park, Seunggi Seo, Jeong Gyu Song, Hanearl Jung, Donghyun Kim, Jun Hyung Lim, Sunhee Lee, Hyungjun Kim

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Abstract

To implement two-dimensional (2D) transition metal dichalcogenides (TMDCs) in electric devices, a top-gated device structure is desired. However, there has been possibility of the channel layer being damaged during the upper dielectric deposition process. Because several layers of 2D TMDCs are atomically thin, the damage may significantly degrade the overall electrical performance. In this study, we investigated the damage to molybdenum disulfide (MoS2) during the atomic layer deposition (ALD) of single dielectrics of Al2O3 and ZrO2. We observed the MoS2 layers were damaged, depending on the ALD process conditions; the kind of oxidant and the growth temperature. To reduce the damage, we formed a bi-layered Al2O3/ZrO2 dielectric structure by developing a two-step ALD process. It is notable that the electrical performance of the device was significantly improved compared to those using the single dielectrics, indicating this two-step process is a promising candidate to satisfy the requirements of future 2D TMDCs-based electronics.

Original languageEnglish
Article number015019
Journal2D Materials
Volume6
Issue number1
DOIs
Publication statusPublished - 2019 Jan

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Woo, W. J., Oh, I. K., Park, B. E., Kim, Y., Park, J., Seo, S., Song, J. G., Jung, H., Kim, D., Lim, J. H., Lee, S., & Kim, H. (2019). Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition. 2D Materials, 6(1), [015019]. https://doi.org/10.1088/2053-1583/aaef1e