To implement two-dimensional (2D) transition metal dichalcogenides (TMDCs) in electric devices, a top-gated device structure is desired. However, there has been possibility of the channel layer being damaged during the upper dielectric deposition process. Because several layers of 2D TMDCs are atomically thin, the damage may significantly degrade the overall electrical performance. In this study, we investigated the damage to molybdenum disulfide (MoS2) during the atomic layer deposition (ALD) of single dielectrics of Al2O3 and ZrO2. We observed the MoS2 layers were damaged, depending on the ALD process conditions; the kind of oxidant and the growth temperature. To reduce the damage, we formed a bi-layered Al2O3/ZrO2 dielectric structure by developing a two-step ALD process. It is notable that the electrical performance of the device was significantly improved compared to those using the single dielectrics, indicating this two-step process is a promising candidate to satisfy the requirements of future 2D TMDCs-based electronics.
Bibliographical noteFunding Information:
This work was supported (in part) by the Yonsei University Research Fund (Post Doc. Researcher Supporting Program) of 2016 (project no.: 2016-12-0233); Samsung Display CO., LTD; Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material];and the Materials and Components Technology Development Program of MOTIE/KEIT (10080642, Development on precursors for carbon/halogen-free thin film and their delivery system for high-k/metal gate application).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering