Bias stress stability of solution-processed zinc tin oxide thin-film transistors

Youngmin Jeong, Keunkyu Song, Dongjo Kim, Chang Young Koo, Jooho Moon

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The effects of bias stress on spin-coated zinc tin oxide (ZTO) transistors are investigated. Applying a positive bias stress results in the displacement of the transfer curves in the positive direction without changing the field-effect mobility or the subthreshold behavior, while a negative stress has no effect on the threshold voltage shift. Device instability appears to be a consequence of the charging and discharging of the temporal trap states at the interface and in the ZTO channel region. All the stressed devices recover their original characteristics after 10 min at room temperature. Furthermore, the inkjet-printed transistor yields similar bias stress effects as those observed in their spin-coated counterparts but has a greater shift in the threshold voltage. Microstructural evidence in conjunction with Rutherford backscattering spectroscopy confirms that severe instability is attributed to the presence of nanopores in the inkjet-printed channel layer.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number11
DOIs
Publication statusPublished - 2009 Oct 13

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
transistors
thin films
Threshold voltage
threshold voltage
Transistors
Nanopores
shift
Rutherford backscattering spectroscopy
charging
backscattering
traps
stannic oxide
room temperature
curves

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Jeong, Youngmin ; Song, Keunkyu ; Kim, Dongjo ; Koo, Chang Young ; Moon, Jooho. / Bias stress stability of solution-processed zinc tin oxide thin-film transistors. In: Journal of the Electrochemical Society. 2009 ; Vol. 156, No. 11.
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Bias stress stability of solution-processed zinc tin oxide thin-film transistors. / Jeong, Youngmin; Song, Keunkyu; Kim, Dongjo; Koo, Chang Young; Moon, Jooho.

In: Journal of the Electrochemical Society, Vol. 156, No. 11, 13.10.2009.

Research output: Contribution to journalArticle

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