Bias-stress-stable solution-processed oxide thin film transistors

Youngmin Jeong, Changdeuck Bae, Dongjo Kim, Keunkyu Song, Kyoohee Woo, Hyunjung Shin, Guozhong Cao, Jooho Moon

Research output: Contribution to journalArticle

102 Citations (Scopus)

Abstract

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

Original languageEnglish
Pages (from-to)611-615
Number of pages5
JournalACS Applied Materials and Interfaces
Volume2
Issue number3
DOIs
Publication statusPublished - 2010 Mar 24

Fingerprint

Thin film transistors
Oxide films
Gallium
Zinc Oxide
Amorphous semiconductors
Tin
Oxygen vacancies
Photoelectrons
Zinc oxide
Tin oxides
Paramagnetic resonance
Photoluminescence
Transistors
Spectroscopy
Fabrication
X rays
Air

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Jeong, Youngmin ; Bae, Changdeuck ; Kim, Dongjo ; Song, Keunkyu ; Woo, Kyoohee ; Shin, Hyunjung ; Cao, Guozhong ; Moon, Jooho. / Bias-stress-stable solution-processed oxide thin film transistors. In: ACS Applied Materials and Interfaces. 2010 ; Vol. 2, No. 3. pp. 611-615.
@article{b9f46ffdede34ff7b71ee15fcb552199,
title = "Bias-stress-stable solution-processed oxide thin film transistors",
abstract = "We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.",
author = "Youngmin Jeong and Changdeuck Bae and Dongjo Kim and Keunkyu Song and Kyoohee Woo and Hyunjung Shin and Guozhong Cao and Jooho Moon",
year = "2010",
month = "3",
day = "24",
doi = "10.1021/am900787k",
language = "English",
volume = "2",
pages = "611--615",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "3",

}

Jeong, Y, Bae, C, Kim, D, Song, K, Woo, K, Shin, H, Cao, G & Moon, J 2010, 'Bias-stress-stable solution-processed oxide thin film transistors', ACS Applied Materials and Interfaces, vol. 2, no. 3, pp. 611-615. https://doi.org/10.1021/am900787k

Bias-stress-stable solution-processed oxide thin film transistors. / Jeong, Youngmin; Bae, Changdeuck; Kim, Dongjo; Song, Keunkyu; Woo, Kyoohee; Shin, Hyunjung; Cao, Guozhong; Moon, Jooho.

In: ACS Applied Materials and Interfaces, Vol. 2, No. 3, 24.03.2010, p. 611-615.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Bias-stress-stable solution-processed oxide thin film transistors

AU - Jeong, Youngmin

AU - Bae, Changdeuck

AU - Kim, Dongjo

AU - Song, Keunkyu

AU - Woo, Kyoohee

AU - Shin, Hyunjung

AU - Cao, Guozhong

AU - Moon, Jooho

PY - 2010/3/24

Y1 - 2010/3/24

N2 - We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

AB - We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=78249268197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78249268197&partnerID=8YFLogxK

U2 - 10.1021/am900787k

DO - 10.1021/am900787k

M3 - Article

C2 - 20356256

AN - SCOPUS:78249268197

VL - 2

SP - 611

EP - 615

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 3

ER -