Abstract
We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 611-615 |
| Number of pages | 5 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Mar 24 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Bias-stress-stable solution-processed oxide thin film transistors. / Jeong, Youngmin; Bae, Changdeuck; Kim, Dongjo; Song, Keunkyu; Woo, Kyoohee; Shin, Hyunjung; Cao, Guozhong; Moon, Jooho.
In: ACS Applied Materials and Interfaces, Vol. 2, No. 3, 24.03.2010, p. 611-615.Research output: Contribution to journal › Article
TY - JOUR
T1 - Bias-stress-stable solution-processed oxide thin film transistors
AU - Jeong, Youngmin
AU - Bae, Changdeuck
AU - Kim, Dongjo
AU - Song, Keunkyu
AU - Woo, Kyoohee
AU - Shin, Hyunjung
AU - Cao, Guozhong
AU - Moon, Jooho
PY - 2010/3/24
Y1 - 2010/3/24
N2 - We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.
AB - We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.
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U2 - 10.1021/am900787k
DO - 10.1021/am900787k
M3 - Article
C2 - 20356256
AN - SCOPUS:78249268197
VL - 2
SP - 611
EP - 615
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 3
ER -