Biexciton photoluminescence in cubic ZnS single crystals

Nguyen Quang Liem; Vu Xuan Quang; Do Xuan Thanh; Joo In Lee; Annamraju Kasi Viswanath; Dongho Kim

doi:10.1063/1.125511

Biexciton photoluminescence in cubic ZnS single crystals

Nguyen Quang Liem, Vu Xuan Quang, Do Xuan Thanh, Joo In Lee, Annamraju Kasi Viswanath, Dongho Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The near-band-edge emission of cubic zinc sulfide single crystals has been studied in detail by steady-state photoluminescence (PL) and time-resolved photoluminescence. Based on the peak energy positions, excitation power density and temperature dependencies of the PL spectra, we interpret the emission as recombination of the free and bound excitons and of the biexcitons. We observed the biexciton emission at 3.791 eV in cubic ZnS single crystals with very low excitation power density. Its binding energy and radiative lifetime were determined to be about 9 meV and 52 ps at 12 K, respectively.

Original language	English
Pages (from-to)	3974-3976
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	25
DOIs	https://doi.org/10.1063/1.125511
Publication status	Published - 1999 Dec 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Biexciton photoluminescence in cubic ZnS single crystals",

abstract = "The near-band-edge emission of cubic zinc sulfide single crystals has been studied in detail by steady-state photoluminescence (PL) and time-resolved photoluminescence. Based on the peak energy positions, excitation power density and temperature dependencies of the PL spectra, we interpret the emission as recombination of the free and bound excitons and of the biexcitons. We observed the biexciton emission at 3.791 eV in cubic ZnS single crystals with very low excitation power density. Its binding energy and radiative lifetime were determined to be about 9 meV and 52 ps at 12 K, respectively.",

author = "Liem, {Nguyen Quang} and Quang, {Vu Xuan} and Thanh, {Do Xuan} and Lee, {Joo In} and Viswanath, {Annamraju Kasi} and Dongho Kim",

year = "1999",

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doi = "10.1063/1.125511",

language = "English",

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AU - Liem, Nguyen Quang

AU - Quang, Vu Xuan

AU - Thanh, Do Xuan

AU - Lee, Joo In

AU - Viswanath, Annamraju Kasi

AU - Kim, Dongho

PY - 1999/12/20

Y1 - 1999/12/20

N2 - The near-band-edge emission of cubic zinc sulfide single crystals has been studied in detail by steady-state photoluminescence (PL) and time-resolved photoluminescence. Based on the peak energy positions, excitation power density and temperature dependencies of the PL spectra, we interpret the emission as recombination of the free and bound excitons and of the biexcitons. We observed the biexciton emission at 3.791 eV in cubic ZnS single crystals with very low excitation power density. Its binding energy and radiative lifetime were determined to be about 9 meV and 52 ps at 12 K, respectively.

AB - The near-band-edge emission of cubic zinc sulfide single crystals has been studied in detail by steady-state photoluminescence (PL) and time-resolved photoluminescence. Based on the peak energy positions, excitation power density and temperature dependencies of the PL spectra, we interpret the emission as recombination of the free and bound excitons and of the biexcitons. We observed the biexciton emission at 3.791 eV in cubic ZnS single crystals with very low excitation power density. Its binding energy and radiative lifetime were determined to be about 9 meV and 52 ps at 12 K, respectively.

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Biexciton photoluminescence in cubic ZnS single crystals

Abstract

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