Bipolar resistive switching behavior in Ti/ MnO2 /Pt structure for nonvolatile memory devices

Min Kyu Yang, Jae Wan Park, Tae Kuk Ko, Jeon Kook Lee

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Abstract

This study examined the electrical properties of Ti/ MnO2 /Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.

Original languageEnglish
Article number042105
JournalApplied Physics Letters
Volume95
Issue number4
DOIs
Publication statusPublished - 2009 Aug 11

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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