Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer

Yue Wang; Minjae Kim; Malik Abdul Rehman; Akendra Singh Chabungbam; Dong Eun Kim; Hong Sub Lee; Ioannis Kymissis; Hyung Ho Park

doi:10.1021/acsami.2c03451

Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer

Yue Wang, Minjae Kim, Malik Abdul Rehman, Akendra Singh Chabungbam, Dong Eun Kim, Hong Sub Lee, Ioannis Kymissis, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial electroforming process in LTO. We used oxygen-deficient ZnO as an interlayer between LTO and a W electrode to clarify whether oxygen migration activates LTO as the Mott transition. ZnO oxygen deficiency provides oxygen ion migration paths as well as a reservoir, facilitating oxygen migration from LTO to the W electrode. Thus, including the ZnO interlayer improved oxygen migration between LTO and the W electrode, achieving a 10-fold increased on/off current ratio. The current research contributes to a better understanding of valence change Mott memory by exploring the LTO resistive switching mechanism and ZnO interlayer influences on the oxygen migration process.

Original language	English
Pages (from-to)	17682-17690
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	14
Issue number	15
DOIs	https://doi.org/10.1021/acsami.2c03451
Publication status	Published - 2022 Apr 20

Bibliographical note

Funding Information:
This material is based upon work supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by Ministry of Science and ICT (grant 2018M3D1A1058536); the National Research Foundation of Korea funded by the Korea government (MSIT) (grant 2019R1A2C2087604); and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.

Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.

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Materials Science(all)

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@article{91f7243e2bd649778ffc608f6491fc4b,

title = "Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer",

abstract = "The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial electroforming process in LTO. We used oxygen-deficient ZnO as an interlayer between LTO and a W electrode to clarify whether oxygen migration activates LTO as the Mott transition. ZnO oxygen deficiency provides oxygen ion migration paths as well as a reservoir, facilitating oxygen migration from LTO to the W electrode. Thus, including the ZnO interlayer improved oxygen migration between LTO and the W electrode, achieving a 10-fold increased on/off current ratio. The current research contributes to a better understanding of valence change Mott memory by exploring the LTO resistive switching mechanism and ZnO interlayer influences on the oxygen migration process.",

author = "Yue Wang and Minjae Kim and Rehman, {Malik Abdul} and Chabungbam, {Akendra Singh} and Kim, {Dong Eun} and Lee, {Hong Sub} and Ioannis Kymissis and Park, {Hyung Ho}",

note = "Funding Information: This material is based upon work supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by Ministry of Science and ICT (grant 2018M3D1A1058536); the National Research Foundation of Korea funded by the Korea government (MSIT) (grant 2019R1A2C2087604); and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: {\textcopyright} 2022 American Chemical Society. All rights reserved.",

year = "2022",

month = apr,

day = "20",

doi = "10.1021/acsami.2c03451",

language = "English",

volume = "14",

pages = "17682--17690",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer

AU - Wang, Yue

AU - Kim, Minjae

AU - Rehman, Malik Abdul

AU - Chabungbam, Akendra Singh

AU - Kim, Dong Eun

AU - Lee, Hong Sub

AU - Kymissis, Ioannis

AU - Park, Hyung Ho

N1 - Funding Information: This material is based upon work supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by Ministry of Science and ICT (grant 2018M3D1A1058536); the National Research Foundation of Korea funded by the Korea government (MSIT) (grant 2019R1A2C2087604); and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: © 2022 American Chemical Society. All rights reserved.

PY - 2022/4/20

Y1 - 2022/4/20

N2 - The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial electroforming process in LTO. We used oxygen-deficient ZnO as an interlayer between LTO and a W electrode to clarify whether oxygen migration activates LTO as the Mott transition. ZnO oxygen deficiency provides oxygen ion migration paths as well as a reservoir, facilitating oxygen migration from LTO to the W electrode. Thus, including the ZnO interlayer improved oxygen migration between LTO and the W electrode, achieving a 10-fold increased on/off current ratio. The current research contributes to a better understanding of valence change Mott memory by exploring the LTO resistive switching mechanism and ZnO interlayer influences on the oxygen migration process.

AB - The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial electroforming process in LTO. We used oxygen-deficient ZnO as an interlayer between LTO and a W electrode to clarify whether oxygen migration activates LTO as the Mott transition. ZnO oxygen deficiency provides oxygen ion migration paths as well as a reservoir, facilitating oxygen migration from LTO to the W electrode. Thus, including the ZnO interlayer improved oxygen migration between LTO and the W electrode, achieving a 10-fold increased on/off current ratio. The current research contributes to a better understanding of valence change Mott memory by exploring the LTO resistive switching mechanism and ZnO interlayer influences on the oxygen migration process.

UR - http://www.scopus.com/inward/record.url?scp=85128800566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85128800566&partnerID=8YFLogxK

U2 - 10.1021/acsami.2c03451

DO - 10.1021/acsami.2c03451

M3 - Article

C2 - 35394742

AN - SCOPUS:85128800566

SN - 1944-8244

VL - 14

SP - 17682

EP - 17690

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 15

ER -

Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer

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