Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM

Choongkeun Lee, Taegun Yim, Hong Il Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A bit-line sense amplifier using PMOS charge transfer pre-sensing (CTPS) circuit is proposed. The CTPS circuit using charge sharing operation between lines which have different capacitance is useful for increasing small bit-line voltage differences. The PMOS latch transistors of CTPS circuit are used for pre-sensing operation and pull-up latching operation. Because the PMOS latch transistors are used mutually, area overhead of the CTPS is minimized. The PMOS CTPS circuit increases the small bit-line voltage difference and the output voltage difference of the CTPS circuit becomes the input voltage difference of the latch sense amplifier. Using the PMOS CTPS circuit, the speed of read operation and the reliability of the read operation is improved. The performance of the proposed scheme is verified by the simulation using a 45 nm process.

Original languageEnglish
Title of host publicationProceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1357-1361
Number of pages5
ISBN (Electronic)9781538654576
DOIs
Publication statusPublished - 2019 Feb 22
Event2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of
Duration: 2018 Oct 282018 Oct 31

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume2018-October
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Conference

Conference2018 IEEE Region 10 Conference, TENCON 2018
CountryKorea, Republic of
CityJeju
Period18/10/2818/10/31

Fingerprint

Dynamic random access storage
Charge transfer
Electric potential
Networks (circuits)
Flip flop circuits
Transistors
Capacitance

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Lee, C., Yim, T., & Yoon, H. I. (2019). Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference (pp. 1357-1361). [8650337] (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2018.8650337
Lee, Choongkeun ; Yim, Taegun ; Yoon, Hong Il. / Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1357-1361 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).
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Lee, C, Yim, T & Yoon, HI 2019, Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. in Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference., 8650337, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., pp. 1357-1361, 2018 IEEE Region 10 Conference, TENCON 2018, Jeju, Korea, Republic of, 18/10/28. https://doi.org/10.1109/TENCON.2018.8650337

Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. / Lee, Choongkeun; Yim, Taegun; Yoon, Hong Il.

Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1357-1361 8650337 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee C, Yim T, Yoon HI. Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1357-1361. 8650337. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2018.8650337