We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).
|Number of pages||6|
|Publication status||Published - 2016 May 7|
Bibliographical notePublisher Copyright:
© 2016 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Science(all)