Black phosphorus-zinc oxide nanomaterial heterojunction for p-n diode and junction field-effect transistor

Pyo Jin Jeon, Young Tack Lee, June Yeong Lim, Jin Sung Kim, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼104 in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

Original languageEnglish
Pages (from-to)1293-1298
Number of pages6
JournalNano Letters
Volume16
Issue number2
DOIs
Publication statusPublished - 2016 Feb 10

Fingerprint

phosphorus oxides
Zinc Oxide
JFET
Field effect transistors
Zinc oxide
p-n junctions
Nanostructured materials
zinc oxides
Phosphorus
Heterojunctions
phosphorus
heterojunctions
Diodes
diodes
Nanosheets
rectification
Nanowires
nanowires
Semiconductor materials
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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Jeon, Pyo Jin ; Lee, Young Tack ; Lim, June Yeong ; Kim, Jin Sung ; Hwang, Do Kyung ; Im, Seongil. / Black phosphorus-zinc oxide nanomaterial heterojunction for p-n diode and junction field-effect transistor. In: Nano Letters. 2016 ; Vol. 16, No. 2. pp. 1293-1298.
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Black phosphorus-zinc oxide nanomaterial heterojunction for p-n diode and junction field-effect transistor. / Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil.

In: Nano Letters, Vol. 16, No. 2, 10.02.2016, p. 1293-1298.

Research output: Contribution to journalArticle

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