Photoluminescence (PL) from the Si ion-irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100°C, the defect-related PL peaks around 450 and 600 nm disappear and a new PL peak appears around 700 nm. This luminescence band is attributed to ∼5 nm-sized Si nanocrystals formed along the Si layer between SiO2 layers.
|Number of pages||5|
|Publication status||Published - 2001 Jun|
|Event||Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France|
Duration: 2000 May 30 → 2000 Jun 2
Bibliographical noteFunding Information:
This work was supported in part by the KOSEF through the ASSRC at Yonsei University, the grants from KOSEF (1999-2-114-004-5), and the Pusan branch of Korea Basic Science Institute (KBSI).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering