Bonding and structural changes of natively oxidized GaAs surface during ion induced deposition of Au

Min Gu Kang, Hyung Ho Park

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The interfacial chemistry and geometry of Au/oxidized GaAs has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS). Both Au-deposition and interface characterization were performed in situ in an ultra-high vacuum XPS chamber. At the initial stage of Au deposition, the pre-formed surface bonding state of As-O prior to Au deposition was completely changed into thermodynamically more stable Ga-O bonding with the kinetic and condensation energies released from Au deposition. The irradiated Au atoms on the GaAs surface produced a mixed state with GaAs. The composition of this Ga-As-Au mixed phase was initially excess-As GaAs due to the liberated As through the bonding transition of oxides. With the successive deposition of Au it gradually changed to excess-Ga state because of the high volatility of As. In particular, this mixed phase was revealed to locate between Ga oxides and Au overlayer. Based on the layered structure model, the quantitative simulation on the Au/GaAs interface could elucidate the resultant bonding-layered structure of interface; Au/Ga-As-Au mixed layer/Ga oxides/GaAs.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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