Abstract
The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 77-81 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 506-507 |
| DOIs | |
| Publication status | Published - 2006 May 26 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Bonding characteristics of Si and Ge incorporated amorphous carbon (a-C) films grown by magnetron sputtering. / Jung, Hae Suk; Park, Hyung Ho; Jung, Sang Bae; Koo Baik, Hong.
In: Thin Solid Films, Vol. 506-507, 26.05.2006, p. 77-81.Research output: Contribution to journal › Article
TY - JOUR
T1 - Bonding characteristics of Si and Ge incorporated amorphous carbon (a-C) films grown by magnetron sputtering
AU - Jung, Hae Suk
AU - Park, Hyung Ho
AU - Jung, Sang Bae
AU - Koo Baik, Hong
PY - 2006/5/26
Y1 - 2006/5/26
N2 - The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.
AB - The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.
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U2 - 10.1016/j.tsf.2005.08.092
DO - 10.1016/j.tsf.2005.08.092
M3 - Article
AN - SCOPUS:33645235870
VL - 506-507
SP - 77
EP - 81
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -