Bonding characteristics of Si and Ge incorporated amorphous carbon (a-C) films grown by magnetron sputtering

Hae Suk Jung, Hyung Ho Park, Sang Bae Jung, Hong Koo Baik

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.

Original languageEnglish
Pages (from-to)77-81
Number of pages5
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - 2006 May 26

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Magnetron sputtering
magnetron sputtering
carbon
Atoms
Ultraviolet spectroscopy
ring structures
Raman spectroscopy
configurations
Carbon
atoms
orbitals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.",
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Bonding characteristics of Si and Ge incorporated amorphous carbon (a-C) films grown by magnetron sputtering. / Jung, Hae Suk; Park, Hyung Ho; Jung, Sang Bae; Koo Baik, Hong.

In: Thin Solid Films, Vol. 506-507, 26.05.2006, p. 77-81.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Bonding characteristics of Si and Ge incorporated amorphous carbon (a-C) films grown by magnetron sputtering

AU - Jung, Hae Suk

AU - Park, Hyung Ho

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AB - The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Six and a-C:Gex) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation due to smaller energy difference between s and p orbital in Si and Ge than C. The C 1s NEXAFS spectra of Si or Ge incorporated a-C films, the formation of Si (or Ge)-C bond is observed, i.e., the formation of a-SiC or a-GeC networks by the incorporation of Si (or Ge) in sp2 hybridized site and bonding with carbon atoms to generate sp3 hybridization. The important role of the incorporated Si and Ge in modifying the bonding configuration of a-C is revealed by using UV Raman spectroscopy to open up the ring structure of sp 2 hybridized bonded C atoms and formation of sp3 hybridized bond with high efficiency.

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