Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

You Seung Rim, Huajun Chen, Xiaolu Kou, Hsin Sheng Duan, Huanping Zhou, Min Cai, Hyun Jae Kim, Yang Yang

Research output: Contribution to journalArticle

114 Citations (Scopus)


Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.

Original languageEnglish
Pages (from-to)4273-4278
Number of pages6
JournalAdvanced Materials
Issue number25
Publication statusPublished - 2014 Jan 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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