Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering