To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH3NH3PbI3) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 106, detectivity of 9.42 × 1010 Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH3NH3PbI3 could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719) and the Center for Advanced Meta-Materials (CAMM) (NRF-2014M3A6B3063716) funded by the National Research Foundation (NRF).
© 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)