Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films

Young Jun Tak; Dong Jun Kim; Won Gi Kim; Jin Hyeok Lee; Si Joon Kim; Jong Hak Kim; Hyun Jae Kim

doi:10.1021/acsami.8b01427

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH₃NH₃PbI₃ Films

Young Jun Tak, Dong Jun Kim, Won Gi Kim, Jin Hyeok Lee, Si Joon Kim, Jong Hak Kim, Hyun Jae Kim

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH₃NH₃PbI₃) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 10⁶, detectivity of 9.42 × 10¹⁰ Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH₃NH₃PbI₃ could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.

Original language	English
Pages (from-to)	12854-12861
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	15
DOIs	https://doi.org/10.1021/acsami.8b01427
Publication status	Published - 2018 Apr 18

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719) and the Center for Advanced Meta-Materials (CAMM) (NRF-2014M3A6B3063716) funded by the National Research Foundation (NRF).

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.8b01427

Cite this

@article{29c3434d5419413289d25ec698762c8a,

title = "Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films",

abstract = "To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH3NH3PbI3) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 106, detectivity of 9.42 × 1010 Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH3NH3PbI3 could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.",

author = "Tak, {Young Jun} and Kim, {Dong Jun} and Kim, {Won Gi} and Lee, {Jin Hyeok} and Kim, {Si Joon} and Kim, {Jong Hak} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719) and the Center for Advanced Meta-Materials (CAMM) (NRF-2014M3A6B3063716) funded by the National Research Foundation (NRF). Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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language = "English",

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AU - Tak, Young Jun

AU - Kim, Dong Jun

AU - Kim, Won Gi

AU - Lee, Jin Hyeok

AU - Kim, Si Joon

AU - Kim, Jong Hak

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719) and the Center for Advanced Meta-Materials (CAMM) (NRF-2014M3A6B3063716) funded by the National Research Foundation (NRF). Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/4/18

Y1 - 2018/4/18

N2 - To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH3NH3PbI3) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 106, detectivity of 9.42 × 1010 Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH3NH3PbI3 could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.

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