Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Hyun Woo Lee, Sun Woong Han, Hong Koo Baik

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

We developed a solution-processed indium oxide (In2O 3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO 2 film. The ZrO2:B film effectively blocked the leakage current at 200 C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 C. The resulting mobilities were 1.25 and 39.3 cm2/(V s), respectively. Finally, we realized a flexible In 2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 C, and it successfully operated a switching device with a mobility of 4.01 cm2/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

Original languageEnglish
Pages (from-to)8067-8075
Number of pages9
JournalACS Applied Materials and Interfaces
Volume5
Issue number16
DOIs
Publication statusPublished - 2013 Aug 28

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this