Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Hyun Woo Lee, Sun Woong Han, Hong Koo Baik

Research output: Contribution to journalArticle

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Abstract

We developed a solution-processed indium oxide (In2O 3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO 2 film. The ZrO2:B film effectively blocked the leakage current at 200 C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 C. The resulting mobilities were 1.25 and 39.3 cm2/(V s), respectively. Finally, we realized a flexible In 2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 C, and it successfully operated a switching device with a mobility of 4.01 cm2/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

Original languageEnglish
Pages (from-to)8067-8075
Number of pages9
JournalACS Applied Materials and Interfaces
Volume5
Issue number16
DOIs
Publication statusPublished - 2013 Aug 28

Fingerprint

Boron
Thin film transistors
Zirconia
Indium
Oxide films
Silicon
Polyimides
Substrates
Temperature
Gate dielectrics
Zirconium
Leakage currents
Differential thermal analysis
Fourier transform infrared spectroscopy
X ray photoelectron spectroscopy
Doping (additives)
X ray diffraction
Oxides
zirconium oxide
indium oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Park, Jee Ho ; Yoo, Young Bum ; Lee, Keun Ho ; Jang, Woo Soon ; Oh, Jin Young ; Chae, Soo Sang ; Lee, Hyun Woo ; Han, Sun Woong ; Baik, Hong Koo. / Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 16. pp. 8067-8075.
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title = "Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor",
abstract = "We developed a solution-processed indium oxide (In2O 3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO 2 film. The ZrO2:B film effectively blocked the leakage current at 200 C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 C. The resulting mobilities were 1.25 and 39.3 cm2/(V s), respectively. Finally, we realized a flexible In 2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 C, and it successfully operated a switching device with a mobility of 4.01 cm2/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.",
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Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. / Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Lee, Hyun Woo; Han, Sun Woong; Baik, Hong Koo.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 16, 28.08.2013, p. 8067-8075.

Research output: Contribution to journalArticle

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T1 - Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor

AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Lee, Keun Ho

AU - Jang, Woo Soon

AU - Oh, Jin Young

AU - Chae, Soo Sang

AU - Lee, Hyun Woo

AU - Han, Sun Woong

AU - Baik, Hong Koo

PY - 2013/8/28

Y1 - 2013/8/28

N2 - We developed a solution-processed indium oxide (In2O 3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO 2 film. The ZrO2:B film effectively blocked the leakage current at 200 C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 C. The resulting mobilities were 1.25 and 39.3 cm2/(V s), respectively. Finally, we realized a flexible In 2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 C, and it successfully operated a switching device with a mobility of 4.01 cm2/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

AB - We developed a solution-processed indium oxide (In2O 3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO 2 film. The ZrO2:B film effectively blocked the leakage current at 200 C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 C. The resulting mobilities were 1.25 and 39.3 cm2/(V s), respectively. Finally, we realized a flexible In 2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 C, and it successfully operated a switching device with a mobility of 4.01 cm2/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

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