Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si

Yoon Jik Lee, Hyun Chul Sohn, Sung Woong Chung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.

Original languageEnglish
Pages (from-to)494-496
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number3
DOIs
Publication statusPublished - 2003 Jul 21

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piles
boron
vapor deposition
vapors
contact resistance
secondary ion mass spectrometry

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.",
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Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si. / Lee, Yoon Jik; Sohn, Hyun Chul; Chung, Sung Woong.

In: Applied Physics Letters, Vol. 83, No. 3, 21.07.2003, p. 494-496.

Research output: Contribution to journalArticle

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T1 - Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si

AU - Lee, Yoon Jik

AU - Sohn, Hyun Chul

AU - Chung, Sung Woong

PY - 2003/7/21

Y1 - 2003/7/21

N2 - The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.

AB - The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.

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