Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

Jang Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jung Woo Kim, Young Gu Lee, Kee Chan Park, Sang Yoon Lee, Jong Min Kim

Research output: Contribution to journalArticle

235 Citations (Scopus)

Abstract

The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

Original languageEnglish
Pages (from-to)1309-1311
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
Publication statusPublished - 2008 Dec 8

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Oxide films
Display devices
Threshold voltage
Oxygen supply
Silicon oxides
Organic light emitting diodes (OLED)
Passivation
Pixels
Fabrication
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kwon, Jang Yeon ; Son, Kyoung Seok ; Jung, Ji Sim ; Kim, Tae Sang ; Ryu, Myung Kwan ; Park, Kyung Bae ; Yoo, Byung Wook ; Kim, Jung Woo ; Lee, Young Gu ; Park, Kee Chan ; Lee, Sang Yoon ; Kim, Jong Min. / Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 12. pp. 1309-1311.
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abstract = "The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.",
author = "Kwon, {Jang Yeon} and Son, {Kyoung Seok} and Jung, {Ji Sim} and Kim, {Tae Sang} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Yoo, {Byung Wook} and Kim, {Jung Woo} and Lee, {Young Gu} and Park, {Kee Chan} and Lee, {Sang Yoon} and Kim, {Jong Min}",
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Kwon, JY, Son, KS, Jung, JS, Kim, TS, Ryu, MK, Park, KB, Yoo, BW, Kim, JW, Lee, YG, Park, KC, Lee, SY & Kim, JM 2008, 'Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display', IEEE Electron Device Letters, vol. 29, no. 12, pp. 1309-1311. https://doi.org/10.1109/LED.2008.2006637

Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display. / Kwon, Jang Yeon; Son, Kyoung Seok; Jung, Ji Sim; Kim, Tae Sang; Ryu, Myung Kwan; Park, Kyung Bae; Yoo, Byung Wook; Kim, Jung Woo; Lee, Young Gu; Park, Kee Chan; Lee, Sang Yoon; Kim, Jong Min.

In: IEEE Electron Device Letters, Vol. 29, No. 12, 08.12.2008, p. 1309-1311.

Research output: Contribution to journalArticle

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AU - Kwon, Jang Yeon

AU - Son, Kyoung Seok

AU - Jung, Ji Sim

AU - Kim, Tae Sang

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Yoo, Byung Wook

AU - Kim, Jung Woo

AU - Lee, Young Gu

AU - Park, Kee Chan

AU - Lee, Sang Yoon

AU - Kim, Jong Min

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