Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

Jang Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jung Woo Kim, Young Gu Lee, Kee Chan Park, Sang Yoon Lee, Jong Min Kim

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239 Citations (Scopus)

Abstract

The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

Original languageEnglish
Pages (from-to)1309-1311
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
Publication statusPublished - 2008 Dec 8

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kwon, J. Y., Son, K. S., Jung, J. S., Kim, T. S., Ryu, M. K., Park, K. B., Yoo, B. W., Kim, J. W., Lee, Y. G., Park, K. C., Lee, S. Y., & Kim, J. M. (2008). Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display. IEEE Electron Device Letters, 29(12), 1309-1311. https://doi.org/10.1109/LED.2008.2006637