Bottom-metal induced leakage current of LTPS diode for ESD protection

H. W. Hwang, K. W. Kim, Y. M. Ha, H. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Leakage current behavior was investigated for diode-connected low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with the coplanar structure for electrostatic discharge (ESD) protection in display product with high luminance backlight system. In this study, the bottom metal (BM) layer was adopted to block lights coming from backlight system. We observed different leakage current behaviors as each other electrical connection of BM layer, such as floating BM (FBM), source-contacted BM (SBM), and gate-contacted BM (GBM). In particular, when negative voltage is applied, LTPS diodes with SBM and FBM show the high leakage current by increasing current flow through back-channel. On the other hand, GBM has comparable low leakage current with non-BM. These leakage current characteristics were verified by technology computer-aided design (TCAD) simulation.

Original languageEnglish
Title of host publicationECS Transactions
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages189-192
Number of pages4
Edition11
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
EventSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number11
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hwang, H. W., Kim, K. W., Ha, Y. M., & Kim, H. J. (2018). Bottom-metal induced leakage current of LTPS diode for ESD protection. In Y. Kuo (Ed.), ECS Transactions (11 ed., pp. 189-192). (ECS Transactions; Vol. 86, No. 11). Electrochemical Society Inc.. https://doi.org/10.1149/08611.0189ecst