Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, S. W. Cho, C. Y. Kim, W. C. Jang, C. N. Whang, K. H. Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

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Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original languageEnglish
Article number163505
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Seo, J. H., Park, D. S., Cho, S. W., Kim, C. Y., Jang, W. C., Whang, C. N., Yoo, K. H., Chang, G. S., Pedersen, T., Moewes, A., Chae, K. H., & Cho, S. J. (2006). Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. Applied Physics Letters, 89(16), [163505]. https://doi.org/10.1063/1.2363940