Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, S. W. Cho, C. Y. Kim, W. C. Jang, C. N. Whang, K. H. Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original languageEnglish
Article number163505
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
Publication statusPublished - 2006 Oct 25

Fingerprint

transistors
buffers
electrical properties
thin films
x ray diffraction
atomic force microscopy
crystal structure
electric potential
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Seo, J. H. ; Park, D. S. ; Cho, S. W. ; Kim, C. Y. ; Jang, W. C. ; Whang, C. N. ; Yoo, K. H. ; Chang, G. S. ; Pedersen, T. ; Moewes, A. ; Chae, K. H. ; Cho, S. J. / Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. In: Applied Physics Letters. 2006 ; Vol. 89, No. 16.
@article{2d22a564ca90415c869a013e59795fa3,
title = "Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors",
abstract = "The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.",
author = "Seo, {J. H.} and Park, {D. S.} and Cho, {S. W.} and Kim, {C. Y.} and Jang, {W. C.} and Whang, {C. N.} and Yoo, {K. H.} and Chang, {G. S.} and T. Pedersen and A. Moewes and Chae, {K. H.} and Cho, {S. J.}",
year = "2006",
month = "10",
day = "25",
doi = "10.1063/1.2363940",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Seo, JH, Park, DS, Cho, SW, Kim, CY, Jang, WC, Whang, CN, Yoo, KH, Chang, GS, Pedersen, T, Moewes, A, Chae, KH & Cho, SJ 2006, 'Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors', Applied Physics Letters, vol. 89, no. 16, 163505. https://doi.org/10.1063/1.2363940

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. / Seo, J. H.; Park, D. S.; Cho, S. W.; Kim, C. Y.; Jang, W. C.; Whang, C. N.; Yoo, K. H.; Chang, G. S.; Pedersen, T.; Moewes, A.; Chae, K. H.; Cho, S. J.

In: Applied Physics Letters, Vol. 89, No. 16, 163505, 25.10.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

AU - Seo, J. H.

AU - Park, D. S.

AU - Cho, S. W.

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Whang, C. N.

AU - Yoo, K. H.

AU - Chang, G. S.

AU - Pedersen, T.

AU - Moewes, A.

AU - Chae, K. H.

AU - Cho, S. J.

PY - 2006/10/25

Y1 - 2006/10/25

N2 - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

AB - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

UR - http://www.scopus.com/inward/record.url?scp=33750162037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750162037&partnerID=8YFLogxK

U2 - 10.1063/1.2363940

DO - 10.1063/1.2363940

M3 - Article

AN - SCOPUS:33750162037

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 163505

ER -