Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, Sangwan Cho, C. Y. Kim, W. C. Jang, C. N. Whang, Kyung-hwa Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original languageEnglish
Article number163505
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
Publication statusPublished - 2006 Oct 25

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transistors
buffers
electrical properties
thin films
x ray diffraction
atomic force microscopy
crystal structure
electric potential
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Seo, J. H. ; Park, D. S. ; Cho, Sangwan ; Kim, C. Y. ; Jang, W. C. ; Whang, C. N. ; Yoo, Kyung-hwa ; Chang, G. S. ; Pedersen, T. ; Moewes, A. ; Chae, K. H. ; Cho, S. J. / Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. In: Applied Physics Letters. 2006 ; Vol. 89, No. 16.
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abstract = "The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.",
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Seo, JH, Park, DS, Cho, S, Kim, CY, Jang, WC, Whang, CN, Yoo, K, Chang, GS, Pedersen, T, Moewes, A, Chae, KH & Cho, SJ 2006, 'Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors', Applied Physics Letters, vol. 89, no. 16, 163505. https://doi.org/10.1063/1.2363940

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. / Seo, J. H.; Park, D. S.; Cho, Sangwan; Kim, C. Y.; Jang, W. C.; Whang, C. N.; Yoo, Kyung-hwa; Chang, G. S.; Pedersen, T.; Moewes, A.; Chae, K. H.; Cho, S. J.

In: Applied Physics Letters, Vol. 89, No. 16, 163505, 25.10.2006.

Research output: Contribution to journalArticle

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T1 - Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

AU - Seo, J. H.

AU - Park, D. S.

AU - Cho, Sangwan

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Whang, C. N.

AU - Yoo, Kyung-hwa

AU - Chang, G. S.

AU - Pedersen, T.

AU - Moewes, A.

AU - Chae, K. H.

AU - Cho, S. J.

PY - 2006/10/25

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