Buffer layer strain transfer in AlN/GaN near critical thickness

Chinkyo Kim, I. K. Robinson, Jae Min Myoung, Kyu Hwan Shim, Kyekyoon Kim

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.

Original languageEnglish
Pages (from-to)4040-4044
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number8
DOIs
Publication statusPublished - 1999 Apr 15

Fingerprint

buffers
sapphire
elastic properties
diffraction
x rays
interactions
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Chinkyo ; Robinson, I. K. ; Myoung, Jae Min ; Shim, Kyu Hwan ; Kim, Kyekyoon. / Buffer layer strain transfer in AlN/GaN near critical thickness. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 8. pp. 4040-4044.
@article{089db85959da4adc873ce662ce6f39c8,
title = "Buffer layer strain transfer in AlN/GaN near critical thickness",
abstract = "X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.",
author = "Chinkyo Kim and Robinson, {I. K.} and Myoung, {Jae Min} and Shim, {Kyu Hwan} and Kyekyoon Kim",
year = "1999",
month = "4",
day = "15",
doi = "10.1063/1.370308",
language = "English",
volume = "85",
pages = "4040--4044",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Buffer layer strain transfer in AlN/GaN near critical thickness. / Kim, Chinkyo; Robinson, I. K.; Myoung, Jae Min; Shim, Kyu Hwan; Kim, Kyekyoon.

In: Journal of Applied Physics, Vol. 85, No. 8, 15.04.1999, p. 4040-4044.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Buffer layer strain transfer in AlN/GaN near critical thickness

AU - Kim, Chinkyo

AU - Robinson, I. K.

AU - Myoung, Jae Min

AU - Shim, Kyu Hwan

AU - Kim, Kyekyoon

PY - 1999/4/15

Y1 - 1999/4/15

N2 - X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.

AB - X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.

UR - http://www.scopus.com/inward/record.url?scp=0032615299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032615299&partnerID=8YFLogxK

U2 - 10.1063/1.370308

DO - 10.1063/1.370308

M3 - Article

AN - SCOPUS:0032615299

VL - 85

SP - 4040

EP - 4044

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -