Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

L. Moreschini, G. Autès, A. Crepaldi, S. Moser, J. C. Johannsen, K. S. Kim, H. Berger, Ph Bugnon, A. Magrez, J. Denlinger, E. Rotenberg, A. Bostwick, O. V. Yazyev, M. Grioni

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

Original languageEnglish
Pages (from-to)115-120
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume201
DOIs
Publication statusPublished - 2015 May 1

Fingerprint

Band structure
Semiconductor materials
Crystal symmetry
Photoelectron spectroscopy
Fermi level
conduction electrons
flexibility
photoelectric emission
Crystal structure
inclusions
Adsorption
Atoms
crystal structure
adsorption
Electrons
symmetry
spectroscopy
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

Cite this

Moreschini, L. ; Autès, G. ; Crepaldi, A. ; Moser, S. ; Johannsen, J. C. ; Kim, K. S. ; Berger, H. ; Bugnon, Ph ; Magrez, A. ; Denlinger, J. ; Rotenberg, E. ; Bostwick, A. ; Yazyev, O. V. ; Grioni, M. / Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl). In: Journal of Electron Spectroscopy and Related Phenomena. 2015 ; Vol. 201. pp. 115-120.
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abstract = "We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.",
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Moreschini, L, Autès, G, Crepaldi, A, Moser, S, Johannsen, JC, Kim, KS, Berger, H, Bugnon, P, Magrez, A, Denlinger, J, Rotenberg, E, Bostwick, A, Yazyev, OV & Grioni, M 2015, 'Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)', Journal of Electron Spectroscopy and Related Phenomena, vol. 201, pp. 115-120. https://doi.org/10.1016/j.elspec.2014.11.004

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl). / Moreschini, L.; Autès, G.; Crepaldi, A.; Moser, S.; Johannsen, J. C.; Kim, K. S.; Berger, H.; Bugnon, Ph; Magrez, A.; Denlinger, J.; Rotenberg, E.; Bostwick, A.; Yazyev, O. V.; Grioni, M.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 201, 01.05.2015, p. 115-120.

Research output: Contribution to journalArticle

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T1 - Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

AU - Moreschini, L.

AU - Autès, G.

AU - Crepaldi, A.

AU - Moser, S.

AU - Johannsen, J. C.

AU - Kim, K. S.

AU - Berger, H.

AU - Bugnon, Ph

AU - Magrez, A.

AU - Denlinger, J.

AU - Rotenberg, E.

AU - Bostwick, A.

AU - Yazyev, O. V.

AU - Grioni, M.

PY - 2015/5/1

Y1 - 2015/5/1

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AB - We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

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