Bulk GaN single crystal growth and characterization using various alkali metal flux

T. I. Shin, H. J. Lee, J. H. Lee, S. W. Kim, S. J. Suh, D. H. Yoon

Research output: Contribution to journalArticlepeer-review


Bulk GaN single crystal was grown by the flux growth. Using a flux, the solvent-thermal method for growing bulk GaN single crystal requires lower temperature (∼800 °C) and pressure (∼100 atm) than when growing them directly from high-temperature solution. In this study, we investigated the influence of the N2 pressure and flux ratio on the growth of the bulk GaN single crystals and used 99% pure alkali metal as a flux. The mole fraction of flux/(flux+Ga) was 0.30-0.67. GaN single crystals were synthesized at a temperature of ∼800 °C and an N2 gas pressure of ∼8 MPa for 200 h. The shape of the single crystals was examined by low magnification microscopy. The hexagonal struture of the GaN single crystals was confirmed by X-ray diffraction. The chemical composition was analyzed by electron probe micro analysis. The amounts of O2 and N2 impurities were analyzed by means of an N2/O2 determinator. The optical properties of the GaN single crystals were examined using a photoluminescence analyzer, in order to verify their suitability for blue emitting diodes.

Original languageEnglish
Pages (from-to)216-220
Number of pages5
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006 Jul 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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