Buried oxide formation by plasma immersion ion implantation

J. Min, P. K. Chu, Y. C. Cheng, J. B. Liu, S. Im, S. Iyer, N. W. Cheung

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Abstract

Although separation by implantation of oxygen (SIMOX) is an attractive approach for fabricating silicon-on-insulator (SOI) materials for radiation-hardened electronic devices and high-speed CMOS circuits, the production cost is high. The novel technique of plasma immersion ion implantation (PIII) emulates the traditional beamline technique in many aspects. Some of the advantages are: no mass selection, no beam transport optics, large area implantation, high ion flux, short implantation time, and low costs. We used PIII and oxygen implantation (nominal dose: 5 × 1017 atoms/cm2) to form thin buried oxide layers in the sub-mtorr operating pressure regime. A 20-50 nm thick buried oxide layer with a Si overlayer thickness of 20-50 nm was fabricated in about 5 min. The implanted wafers were capped with a nitride layer and subsequently annealed for 6 h at 1300 °C in a nitrogen ambient to remove the damage. The resulting wafers were analyzed using a variety of techniques, including RBS and XTEM.

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalMaterials Chemistry & Physics
Volume40
Issue number3
DOIs
Publication statusPublished - 1995 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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    Min, J., Chu, P. K., Cheng, Y. C., Liu, J. B., Im, S., Iyer, S., & Cheung, N. W. (1995). Buried oxide formation by plasma immersion ion implantation. Materials Chemistry & Physics, 40(3), 219-222. https://doi.org/10.1016/0254-0584(95)01474-8