Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures

Eungman Lee, Jae Won Hahn

Research output: Contribution to journalConference article

Abstract

Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.

Original languageEnglish
Article number71401J
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7140
DOIs
Publication statusPublished - 2008
EventLithography Asia 2008 - Taipei, Taiwan, Province of China
Duration: 2008 Nov 42008 Nov 6

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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