Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures

Eungman Lee, Jae Won Hahn

Research output: Contribution to journalConference article

Abstract

Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.

Original languageEnglish
Article number71401J
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7140
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Photoresist
Photoresists
photoresists
Electric Field
Metals
apertures
Electric fields
Three-dimensional
electric fields
profiles
metals
Theoretical Model
Surface Plasmon Polariton
Finite-difference Time-domain Method
Finite-difference Time-domain (FDTD)
Finite difference time domain method
Plasmonics
Patterning
Process Parameters
Lithography

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{74f31338e4e34a6ea5b5072f0eb34e0d,
title = "Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures",
abstract = "Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.",
author = "Eungman Lee and Hahn, {Jae Won}",
year = "2008",
month = "12",
day = "1",
doi = "10.1117/12.805399",
language = "English",
volume = "7140",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures

AU - Lee, Eungman

AU - Hahn, Jae Won

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.

AB - Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.

UR - http://www.scopus.com/inward/record.url?scp=62449334566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62449334566&partnerID=8YFLogxK

U2 - 10.1117/12.805399

DO - 10.1117/12.805399

M3 - Conference article

VL - 7140

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

M1 - 71401J

ER -