Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang; Hee Sung Lee; Kyunghee Choi; Seongil Im

doi:10.1109/LED.2012.2195632

Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang, Hee Sung Lee, Kyunghee Choi, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

Original language	English
Article number	6204317
Pages (from-to)	1015-1017
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2195632
Publication status	Published - 2012

Bibliographical note

Funding Information:
Manuscript received March 27, 2012; accepted April 6, 2012. Date of publication May 24, 2012; date of current version June 22, 2012. This work was supported in part by KOSEF (NRL program: Grant 2012-0000126) and in part by BK21 Project. The review of this letter was arranged by Editor A. Chin.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors",

abstract = "We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.",

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AU - Chang, Youn Gyoung

AU - Lee, Hee Sung

AU - Choi, Kyunghee

AU - Im, Seongil

N1 - Funding Information: Manuscript received March 27, 2012; accepted April 6, 2012. Date of publication May 24, 2012; date of current version June 22, 2012. This work was supported in part by KOSEF (NRL program: Grant 2012-0000126) and in part by BK21 Project. The review of this letter was arranged by Editor A. Chin.

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AB - We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

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