Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang, Hee Sung Lee, Kyunghee Choi, Seongil Im

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9 Citations (Scopus)


We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

Original languageEnglish
Article number6204317
Pages (from-to)1015-1017
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2012 May 31


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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