Abstract
We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.
| Original language | English |
|---|---|
| Article number | 6204317 |
| Pages (from-to) | 1015-1017 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 May 31 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
}
Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors. / Chang, Youn Gyoung; Lee, Hee Sung; Choi, Kyunghee; Im, Seongil.
In: IEEE Electron Device Letters, Vol. 33, No. 7, 6204317, 31.05.2012, p. 1015-1017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors
AU - Chang, Youn Gyoung
AU - Lee, Hee Sung
AU - Choi, Kyunghee
AU - Im, Seongil
PY - 2012/5/31
Y1 - 2012/5/31
N2 - We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.
AB - We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.
UR - http://www.scopus.com/inward/record.url?scp=84862878993&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862878993&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2195632
DO - 10.1109/LED.2012.2195632
M3 - Article
AN - SCOPUS:84862878993
VL - 33
SP - 1015
EP - 1017
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
M1 - 6204317
ER -