Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang, Hee Sung Lee, Kyunghee Choi, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

Original languageEnglish
Article number6204317
Pages (from-to)1015-1017
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number7
DOIs
Publication statusPublished - 2012 May 31

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Capacitance measurement
Voltage measurement
Amorphous films
Thin film transistors
Photons
Electric potential
Transistors
Capacitance
Spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{14c78848db2d41e6a56f81bda270d624,
title = "Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors",
abstract = "We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.",
author = "Chang, {Youn Gyoung} and Lee, {Hee Sung} and Kyunghee Choi and Seongil Im",
year = "2012",
month = "5",
day = "31",
doi = "10.1109/LED.2012.2195632",
language = "English",
volume = "33",
pages = "1015--1017",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors. / Chang, Youn Gyoung; Lee, Hee Sung; Choi, Kyunghee; Im, Seongil.

In: IEEE Electron Device Letters, Vol. 33, No. 7, 6204317, 31.05.2012, p. 1015-1017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

AU - Chang, Youn Gyoung

AU - Lee, Hee Sung

AU - Choi, Kyunghee

AU - Im, Seongil

PY - 2012/5/31

Y1 - 2012/5/31

N2 - We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

AB - We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

UR - http://www.scopus.com/inward/record.url?scp=84862878993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862878993&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2195632

DO - 10.1109/LED.2012.2195632

M3 - Article

AN - SCOPUS:84862878993

VL - 33

SP - 1015

EP - 1017

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

M1 - 6204317

ER -