Abstract
We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.
| Original language | English |
|---|---|
| Article number | 6204317 |
| Pages (from-to) | 1015-1017 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 |
Bibliographical note
Funding Information:Manuscript received March 27, 2012; accepted April 6, 2012. Date of publication May 24, 2012; date of current version June 22, 2012. This work was supported in part by KOSEF (NRL program: Grant 2012-0000126) and in part by BK21 Project. The review of this letter was arranged by Editor A. Chin.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering