Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang; Hee Sung Lee; Kyunghee Choi; Seongil Im

doi:10.1109/LED.2012.2195632

Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors

Youn Gyoung Chang, Hee Sung Lee, Kyunghee Choi, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si-and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

Original language	English
Article number	6204317
Pages (from-to)	1015-1017
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2195632
Publication status	Published - 2012 May 31

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Chang, Y. G., Lee, H. S., Choi, K., & Im, S. (2012). Capacitance-voltage measurement with photon probe to quantify the trap density of states in amorphous thin-film transistors. IEEE Electron Device Letters, 33(7), 1015-1017. [6204317]. https://doi.org/10.1109/LED.2012.2195632

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10.1109/LED.2012.2195632