Carbon-incorporated amorphous indium zinc oxide thin-film transistors

S. Parthiban, K. Park, Hyun Jae Kim, S. Yang, Jang-Yeon Kwon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm 2 V -1 s -1 and on-off current ratio of ≥4.3 × 10 7 .

Original languageEnglish
Pages (from-to)4224-4228
Number of pages5
JournalJournal of Electronic Materials
Volume43
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Zinc Oxide
Indium
Amorphous carbon
Thin film transistors
Zinc oxide
zinc oxides
indium oxides
Oxide films
transistors
carbon
thin films
suppressors
Amorphous films
Binders
Sputtering
Carbon
sputtering
Doping (additives)
Oxygen
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Carbon-incorporated amorphous indium zinc oxide thin-film transistors. / Parthiban, S.; Park, K.; Kim, Hyun Jae; Yang, S.; Kwon, Jang-Yeon.

In: Journal of Electronic Materials, Vol. 43, No. 11, 01.11.2014, p. 4224-4228.

Research output: Contribution to journalArticle

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AU - Parthiban, S.

AU - Park, K.

AU - Kim, Hyun Jae

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AU - Kwon, Jang-Yeon

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