Carbon-incorporated amorphous indium zinc oxide thin-film transistors

S. Parthiban, K. Park, H. J. Kim, S. Yang, J. Y. Kwon

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.

Original languageEnglish
Pages (from-to)4224-4228
Number of pages5
JournalJournal of Electronic Materials
Volume43
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Carbon-incorporated amorphous indium zinc oxide thin-film transistors'. Together they form a unique fingerprint.

  • Cite this