Carrier gas effects on the selectivity in chemical vapor deposition of copper

Seok Kim, Jong Man Park, Doo Jin Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

One of the interesting areas of Cu-CVD is the selective deposition, which attracts more attention based on its potential as a patterning method of Cu. The selectivity of Cu-CVD for PECVD-SiO2, TiN, and Al substrates was investigated systematically using a (hfac)Cu(VTMS) with carrier gas of H2 and Ar as functions of deposition temperatures (150-200°C), chamber pressures (0.3-1.0 Torr), and deposition times. The apparent incubation time on each substrate was increased as the conductivity of substrates, the deposition temperature, and the chamber pressure were decreased. Moreover, H2 carrier gas atmosphere had shorter incubation time, higher deposition rate, and smaller, better-connected Cu grains than Ar carrier gas. These are considered to be due to the increment of surface adsorption sites (-OH) of precursor in the case of H2 carrier gas. This influence of H2 on microstructural morphology of Cu films yielded lower resistivity than Ar. A minimum value obtained under H2 atmosphere was 2.37 μΩ cm.

Original languageEnglish
Pages (from-to)229-237
Number of pages9
JournalThin Solid Films
Volume315
Issue number1-2
DOIs
Publication statusPublished - 1998 Mar 2

Fingerprint

Copper
Chemical vapor deposition
Gases
selectivity
vapor deposition
copper
gases
pressure chambers
Substrates
Plasma enhanced chemical vapor deposition
atmospheres
Deposition rates
Adsorption
Temperature
conductivity
electrical resistivity
adsorption
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Seok ; Park, Jong Man ; Choi, Doo Jin. / Carrier gas effects on the selectivity in chemical vapor deposition of copper. In: Thin Solid Films. 1998 ; Vol. 315, No. 1-2. pp. 229-237.
@article{eed6d7afcd884658b40f272ae87acb34,
title = "Carrier gas effects on the selectivity in chemical vapor deposition of copper",
abstract = "One of the interesting areas of Cu-CVD is the selective deposition, which attracts more attention based on its potential as a patterning method of Cu. The selectivity of Cu-CVD for PECVD-SiO2, TiN, and Al substrates was investigated systematically using a (hfac)Cu(VTMS) with carrier gas of H2 and Ar as functions of deposition temperatures (150-200°C), chamber pressures (0.3-1.0 Torr), and deposition times. The apparent incubation time on each substrate was increased as the conductivity of substrates, the deposition temperature, and the chamber pressure were decreased. Moreover, H2 carrier gas atmosphere had shorter incubation time, higher deposition rate, and smaller, better-connected Cu grains than Ar carrier gas. These are considered to be due to the increment of surface adsorption sites (-OH) of precursor in the case of H2 carrier gas. This influence of H2 on microstructural morphology of Cu films yielded lower resistivity than Ar. A minimum value obtained under H2 atmosphere was 2.37 μΩ cm.",
author = "Seok Kim and Park, {Jong Man} and Choi, {Doo Jin}",
year = "1998",
month = "3",
day = "2",
doi = "10.1016/S0040-6090(97)00684-6",
language = "English",
volume = "315",
pages = "229--237",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Carrier gas effects on the selectivity in chemical vapor deposition of copper. / Kim, Seok; Park, Jong Man; Choi, Doo Jin.

In: Thin Solid Films, Vol. 315, No. 1-2, 02.03.1998, p. 229-237.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carrier gas effects on the selectivity in chemical vapor deposition of copper

AU - Kim, Seok

AU - Park, Jong Man

AU - Choi, Doo Jin

PY - 1998/3/2

Y1 - 1998/3/2

N2 - One of the interesting areas of Cu-CVD is the selective deposition, which attracts more attention based on its potential as a patterning method of Cu. The selectivity of Cu-CVD for PECVD-SiO2, TiN, and Al substrates was investigated systematically using a (hfac)Cu(VTMS) with carrier gas of H2 and Ar as functions of deposition temperatures (150-200°C), chamber pressures (0.3-1.0 Torr), and deposition times. The apparent incubation time on each substrate was increased as the conductivity of substrates, the deposition temperature, and the chamber pressure were decreased. Moreover, H2 carrier gas atmosphere had shorter incubation time, higher deposition rate, and smaller, better-connected Cu grains than Ar carrier gas. These are considered to be due to the increment of surface adsorption sites (-OH) of precursor in the case of H2 carrier gas. This influence of H2 on microstructural morphology of Cu films yielded lower resistivity than Ar. A minimum value obtained under H2 atmosphere was 2.37 μΩ cm.

AB - One of the interesting areas of Cu-CVD is the selective deposition, which attracts more attention based on its potential as a patterning method of Cu. The selectivity of Cu-CVD for PECVD-SiO2, TiN, and Al substrates was investigated systematically using a (hfac)Cu(VTMS) with carrier gas of H2 and Ar as functions of deposition temperatures (150-200°C), chamber pressures (0.3-1.0 Torr), and deposition times. The apparent incubation time on each substrate was increased as the conductivity of substrates, the deposition temperature, and the chamber pressure were decreased. Moreover, H2 carrier gas atmosphere had shorter incubation time, higher deposition rate, and smaller, better-connected Cu grains than Ar carrier gas. These are considered to be due to the increment of surface adsorption sites (-OH) of precursor in the case of H2 carrier gas. This influence of H2 on microstructural morphology of Cu films yielded lower resistivity than Ar. A minimum value obtained under H2 atmosphere was 2.37 μΩ cm.

UR - http://www.scopus.com/inward/record.url?scp=0032473224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032473224&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(97)00684-6

DO - 10.1016/S0040-6090(97)00684-6

M3 - Article

AN - SCOPUS:0032473224

VL - 315

SP - 229

EP - 237

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -