One of the interesting areas of Cu-CVD is the selective deposition, which attracts more attention based on its potential as a patterning method of Cu. The selectivity of Cu-CVD for PECVD-SiO2, TiN, and Al substrates was investigated systematically using a (hfac)Cu(VTMS) with carrier gas of H2 and Ar as functions of deposition temperatures (150-200°C), chamber pressures (0.3-1.0 Torr), and deposition times. The apparent incubation time on each substrate was increased as the conductivity of substrates, the deposition temperature, and the chamber pressure were decreased. Moreover, H2 carrier gas atmosphere had shorter incubation time, higher deposition rate, and smaller, better-connected Cu grains than Ar carrier gas. These are considered to be due to the increment of surface adsorption sites (-OH) of precursor in the case of H2 carrier gas. This influence of H2 on microstructural morphology of Cu films yielded lower resistivity than Ar. A minimum value obtained under H2 atmosphere was 2.37 μΩ cm.
Bibliographical noteFunding Information:
The authors acknowledge the support of LG Semicon.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry